An integrated electronic device including: a main body delimited by a front surface; a top conductive region extending within the main body, starting from the front surface; a first dielectric region extending on the front surface; and a barrier structure, arranged on the first dielectric region. A first aperture extends through the barrier structure and the first dielectric region; the first aperture is delimited at bottom by the top conductive region. The integrated electronic device further includes a contact structure including at least a first conductive region extending within the first aperture, in direct contact with the top conductive region and the barrier structure.

An integrated electronic device including: a main body delimited by a front surface; a top conductive region extending within the main body, starting from the front surface; a first dielectric region extending on the front surface; and a barrier structure, arranged on the first dielectric region. A first aperture extends through the barrier structure and the first dielectric region; the first aperture is delimited at bottom by the top conductive region. The integrated electronic device further includes a contact structure including at least a first conductive region extending within the first aperture, in direct contact with the top conductive region and the barrier structure.

A display panel includes a substrate including a display area and a pad area spaced apart from the display area, and an uneven pad disposed on the substrate in the pad area. The uneven pad includes a first conductive layer, a first organic layer disposed on the first conductive layer and having an upper surface having an uneven shape, and a second conductive layer disposed on the first organic layer.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

The present disclosure describes a structure with a controlled polyimide profile and a method for forming such a structure. The method includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.

The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.

Bonded structures having conductive features and isolation features are disclosed. In one example, a bonded structure can include a first element including a first insulating layer and at least two first conductive features disposed in the first insulating layer. The bonded structure can also include a second element including a second insulating layer and at least two second conductive features disposed in the second insulating substrate. The first element can be directly bonded to the second element with the at least two first conductive features aligned with the at least two second conductive features. The bonded structure can also include an isolation feature in the second insulating layer and between the at least two second conductive features. The isolation feature can have a dielectric constant lower than a dielectric constant of the second insulating layer.