The present application discloses a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes providing a substrate, forming a pad structure above the substrate, and forming a top groove on a top surface of the pad structure.

The present application discloses a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes providing a substrate, forming a pad structure above the substrate, and forming a top groove on a top surface of the pad structure.

Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

A pad electrode is formed in an uppermost wiring layer of a multilayer wiring layer formed on a semiconductor substrate. A dielectric film is formed to cover the pad electrode. An opening portion is formed in the dielectric film so as to reach the pad electrode. In the opening portion, a conductive film that is a part of a conductive layer is electrically connected to the pad electrode. On a side surface of the conductive film, an oxide layer in which a material contained in the conductive film is oxidized is formed. A width of the oxide layer is 200 nm or more.

According to one aspect, a semiconductor device includes: a buffer layer disposed on a front surface of a second semiconductor layer, and having at least one opening in plan view; and an electrode disposed over the second semiconductor layer and the buffer layer, and being in contact with the second semiconductor layer through the at least one opening, wherein the buffer layer has a higher Vickers hardness than the electrode, and a width w of each of the at least one opening satisfies w<W.sub.th, where s is a thickness of the buffer layer, t is a thickness of the electrode, and W.sub.th=2×(s×t−s.sup.2).sup.0.5 holds true.

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

According to an aspect of the present disclosure, a semiconductor device includes a semiconductor substrate, a lower electrode provided on the semiconductor substrate, an insulating film that is provided on the semiconductor substrate and surrounds the lower electrode and a metal film that is provided on the lower electrode and includes a convex portion on an upper surface thereof, wherein the convex portion includes a first portion extending in a first direction parallel to an upper surface of the semiconductor substrate, and a second portion extending in a second direction that is parallel to the upper surface of the semiconductor substrate and intersects the first direction, and the metal film is thinner than the insulating film.

According to one aspect, a semiconductor device includes: a buffer layer disposed on a front surface of a second semiconductor layer, and having at least one opening in plan view; and an electrode disposed over the second semiconductor layer and the buffer layer, and being in contact with the second semiconductor layer through the at least one opening, wherein the buffer layer has a higher Vickers hardness than the electrode, and a width w of each of the at least one opening satisfies w<W.sub.th, where s is a thickness of the buffer layer, t is a thickness of the electrode, and W.sub.th=2×(s×t−s.sup.2).sup.0.5 holds true.

A customized seal ring for a semiconductor device is formed of multiple seal ring cells that are selected and arranged to produce a seal ring design. The cells include first cells that are coupled to ground and second cells that are not coupled to ground. The second cells that are not coupled to ground, include a higher density of metal features in an inner portion thereof, than the first seal ring cells. Dummy metal vias and other metal features that may be present in the inner portion of the second seal ring cells are absent from the inner portion of the first seal ring cells that are coupled to ground. The seal ring design may include various arrangements, including alternating and repeating sequences of the different seal ring cells.