The present application provides a method for preparing a semiconductor device, include the following steps: forming a source/drain (S/D) region in a semiconductor substrate; forming a bonding pad over the semiconductor substrate; forming a first spacer over a sidewall of the bonding pad; forming a first passivation layer covering the bonding pad and the first spacer; and forming a conductive bump over the first passivation layer, wherein the conductive bump penetrates through the first passivation layer to electrically connect to the bonding pad and the S/D region.

A semiconductor device includes a semiconductor substrate having a main surface over which a plurality of die pads and at least one alignment pad for optical process control for semiconductor wafer probing are arranged. The alignment pad has a hardness smaller than a hardness of the plurality of die pads.

In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peripheral portions. The method includes: providing a sacrificial layer to cover the marginal regions of the underlying layer, providing the metallizations while the marginal regions of the underlying layer are covered by the sacrificial layer, and removing the sacrificial layer so that the marginal regions of the underlying layer extend facing the peripheral portions in the absence of contact interface therebetween, thereby avoiding thermo-mechanical stresses.

A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

A semiconductor device includes a conductive pattern disposed over a semiconductor substrate, and an interconnect structure disposed over the conductive pattern. The semiconductor device also includes an interconnect liner formed between the interconnect structure and the conductive pattern and surrounding the interconnect structure. The inner sidewall surfaces of the interconnect liner are in direct contact with the interconnect structure, and a maximum distance between outer sidewall surfaces of the interconnect liner is greater than a width of the conductive pattern. The semiconductor device further includes a semiconductor die bonded to the semiconductor substrate. The semiconductor die includes a conductive pad facing the interconnect structure, wherein the conductive pad is electrically connected to the conductive pattern.

A semiconductor device includes two integrated circuit (IC) chips. The first IC chip includes substrate, a spacer connected to the substrate and including holes, wherein at least one of the holes has a first shape, and solder bumps positioned in the holes, respectively. The second IC chip includes a substrate, electrode pads extending from the substrate and connected to the solder bumps, respectively. At least one of the electrode pads that corresponds to the at least one of the solder bumps has a second shape, and the first shape and the second shape are non-coextensive such that there is at least one gap between the first shape and the second shape when projected on each other.

Disclosed herein is an electronic component that includes a mounting surface having a terminal formation area and a plurality of terminal electrodes arranged in an array in the terminal formation area. The center point of the terminal formation area is offset with respect to the center point of the mounting surface. Thus, at mounting of the electronic component on a mounting substrate, a solder paste is supplied to a land pattern, and then the mounting is performed such that the center point of a mounting area and the center point of the mounting surface coincide with each other, whereby a predetermined displacement occurs between the planar positions of the land pattern and terminal electrode. This allows a void inside the solder to be released outside without involving a layout change of the land pattern.

A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

A semiconductor device includes a semiconductor substrate having a main surface over which a plurality of die pads and at least one alignment pad for optical process control for semiconductor wafer probing are arranged. The alignment pad has a hardness smaller than a hardness of the plurality of die pads.