Patent classifications
H01L2224/05026
Package with metal-insulator-metal capacitor and method of manufacturing the same
A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.
Package with metal-insulator-metal capacitor and method of manufacturing the same
A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.
BUILD-UP PACKAGE FOR INTEGRATED CIRCUIT DEVICES, AND METHODS OF MAKING SAME
A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.
DISPLAY DEVICE AND TILED DISPLAY DEVICE
A display device including a substrate having a first side surface, a first surface, a second surface opposite to the first surface, a first chamfered surface extending from an edge of the first surface to the first side surface, a second chamfered surface extending from an edge of the second surface t the first side surface, a pixel on the first surface of the substrate and including a light emitting element configured to emit light, a first driving pad at the edge of the first surface of the substrate and electrically connected to the pixel, and a side wiring on the first surface, the first chamfered surface, the first side surface, the second chamfered surface, and the second surface of the substrate. The first driving pad has a flat portion connected to the side wiring.
DISPLAY DEVICE AND TILED DISPLAY DEVICE
A display device includes a substrate, a plurality of electrode pads including a first electrode pad and a common electrode pad on the substrate, a light emitting element including a first contact electrode on the first electrode pad and a second contact electrode on the common electrode pad, a conductive adhesive member including a plurality of conductive balls connecting the first electrode pad and the first contact electrode and connecting the common electrode pad and the second contact electrode, and a plurality of protrusions on the substrate and protruding in a thickness direction of the substrate. First protrusions from among the plurality of protrusions overlap the electrode pads in the thickness direction of the substrate.
Method for producing structure, and structure
This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.
DISPLAY DEVICE AND TILED DISPLAY DEVICE INCLUDING THE SAME
A display device includes a substrate including a first surface, a second surface opposite to the first surface, a first chamfered surface extending from one side of the first surface, a second chamfered surface extending from one side of the second surface, and a side surface connecting the first chamfered surface to the second chamfered surface, a pixel on the first surface of the substrate and including a light emitting element to emit light, a plurality of front pad parts on an edge of the first surface of the substrate and electrically connected to the pixel, a plurality of rear pad parts on an edge of the second surface of the substrate, and a plurality of side surface connection lines on the side surface of the substrate electrically connecting the plurality of front pad parts to the plurality of rear pad parts.