A package structure includes the following: a logic die; and a plurality of core dies sequentially stacked on the logic die along a vertical direction, in which the plurality of core dies include a first core die and a second core die interconnected through a hybrid bonding member; the hybrid bonding member includes: a first contact pad located on a surface of the first core die; and a second contact pad located on a surface of the second core die; the first contact pad is in contact bonding with the second contact pad.

A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer insulating film of the plurality of interlayer insulating films, which is provided farthest from the first main surface in the thickness direction; and a passivation film arranged on the top interlayer insulating film so as to cover the top wiring. The top wiring includes a first wiring portion and a second wiring portion that extend in a first direction in plan view and are adjacent to each other in a second direction orthogonal to the first direction. A first distance between an upper surface of the top wiring and the top interlayer insulating film in the thickness direction is 2.7 μm or more.

A light-emitting diode (LED) module includes: a glass substrate; a signal wiring layer provided on the glass substrate and including a plurality of electrodes connected by a passive matrix circuit; and a plurality of LEDs connected to the plurality of electrodes and configured to emit light toward the glass substrate, wherein the signal wiring layer further includes a boundary region that divides the LED module into a plurality of unit regions.

The present application discloses a semiconductor device with a barrier layer including aluminum fluoride and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a circuit layer positioned on the substrate, a pad layer positioned in the circuit layer and including aluminum and copper, a first barrier layer positioned on the pad layer and including aluminum fluoride, and a first connector positioned on the first barrier layer.

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

The present application discloses a semiconductor device with a barrier layer including aluminum fluoride and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a circuit layer positioned on the substrate, a pad layer positioned in the circuit layer and including aluminum and copper, a first barrier layer positioned on the pad layer and including aluminum fluoride, and a first connector positioned on the first barrier layer.

The present application discloses a semiconductor device with a barrier layer including aluminum fluoride and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a circuit layer positioned on the substrate, a pad layer positioned in the circuit layer and including aluminum and copper, a first barrier layer positioned on the pad layer and including aluminum fluoride, and a first connector positioned on the first barrier layer.

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

In a method for connecting components during production of power electronics modules or assemblies, surfaces of the components have a metallic surface layer upon supply, or are furnished therewith, wherein the layer has a surface that is smooth enough to allow direct bonding or is smoothed to obtain a surface that is smooth enough to allow direct bonding. The surface layers of the surfaces that are to be connected are then pressed against each other with a pressure of at least 5 MPa at elevated temperature, so that they are joined to each other, forming a single layer. The method enables simple, rapid connection of even relatively large contact surfaces, which satisfies the high requirements of power electronics modules.