A display device includes a first substrate including a display area, a non-display area, and a plurality of pixel circuit units in the display area and the non-display area, a plurality of light emitting elements on the first substrate in the display area, the plurality of light emitting elements being electrically connected to the pixel circuit units, a hole mask layer on the first substrate and including a plurality of holes corresponding to the light emitting elements, a second substrate on the hole mask layer and including a plurality of open holes corresponding to the plurality of holes, and a plurality of light exit patterns in the plurality of the open holes of the second substrate corresponding to the plurality of holes, wherein each of the light exit patterns includes a first part in one of the plurality of open holes.

A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

A semiconductor device is provided. The semiconductor device includes a substrate, input and output (I/O) pads disposed at an upper portion of the semiconductor substrate, and first bump pillars disposed over the I/O pads. The first bump pillars are selectively arranged over some of the I/O pads in a first horizontal direction.

In one embodiment, a semiconductor device includes a lower interconnect layer including a plurality of lower interconnects, and a plurality of lower pads provided on the lower interconnects. The device further includes a plurality of upper pads provided on the lower pads and being in contact with the lower pads, and an upper interconnect layer including a plurality of upper interconnects provided on the upper pads. The lower pads include a plurality of first pads and a plurality of second pads. The upper pads include a plurality of third pads provided on the second pads and a plurality of fourth pads provided on the first pads, a lower face of each third pad is larger in area than a upper face of each second pad, and a lower face of each fourth pad is smaller in area than a upper face of each first pad.

A semiconductor device has a temporary carrier. A semiconductor die is oriented with an active surface toward, and mounted to, the temporary carrier. An encapsulant is deposited with a first surface over the temporary carrier and a second surface, opposite the first surface, is deposited over a backside of the semiconductor die. The temporary carrier is removed. A portion of the encapsulant in a periphery of the semiconductor die is removed to form an opening in the first surface of the encapsulant. An interconnect structure is formed over the active surface of the semiconductor die and extends into the opening in the encapsulant layer. A via is formed and extends from the second surface of the encapsulant to the opening. A first bump is formed in the via and electrically connects to the interconnect structure.

An electronic device includes a via-array substrate, an outer layer, and an alignment substrate. The via-array substrate has a plurality of first vias. The outer layer has a plurality of second vias and is disposed on a side of the via-array substrate. The first vias are greater in distribution density or quantity than the second vias. A part of the first vias is electrically connected to the second vias, and another part of the first vias is electrically floating. The alignment substrate includes a core layer disposed on the outer layer, a plurality of conductive traces, a plurality of interconnecting pads, and a plurality of alignment mark pads. The conductive traces are disposed in the core layer. The interconnecting pads and the alignment mark pads are disposed on a surface of the core layer located away from the outer layer. A part of the conductive traces electrically connects a part of the interconnecting pads and a part of the first vias. A pattern of each of the alignment mark pads is different from a pattern of each of the interconnecting pads.

A half-bridge circuit package structure includes a chip pad, a first metal island, a driving chip, an upper bridge switch, and a lower bridge switch. The driving chip includes a ground pad and a high side ground pad. The upper bridge switch includes a first enhancement mode transistor and a first depletion mode transistor. A drain pad of the first depletion mode transistor is electrically connected to the first metal island. The lower bridge switch includes a second enhancement mode transistor and a second depletion mode transistor. A source pad of the second depletion mode transistor is electrically connected to a drain pad of the second enhancement mode transistor. A drain pad of the second depletion mode transistor is electrically connected to the first metal island.

A semiconductor device has an encapsulant deposited over a first surface of the semiconductor die and around the semiconductor die. A first insulating layer is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the first insulating layer. An interconnect structure is formed through the encapsulant outside a footprint of the semiconductor die and electrically connected to the conductive layer. The first insulating layer includes an optically transparent or translucent material. The semiconductor die includes a sensor configured to receive an external stimulus passing through the first insulating layer. A second insulating layer is formed over the first surface of the semiconductor die. A conductive via is formed through the first insulating layer outside a footprint of the semiconductor die. A plurality of stacked semiconductor devices is electrically connected through the interconnect structure.

An interface of integrated circuit (IC) die includes a plurality of the contact elements formed as a contact element pattern corresponding to a parallel bus. The contact elements are arranged in an array of rows and columns and divided into a transmitting group and a receiving group. The contact elements of the transmitting group have a first contact element sequence and the contact elements of the receiving group have a second contact element sequence, the first contact element sequence is identical to the second contact element sequence. The contact elements with the first contact element sequence and the second contact element sequence are matched when the contact element pattern is geometrically rotated by 180° with respect to a row direction and a column direction.