A display device includes a display region and a periphery region surrounding the display region. The display device includes an driving circuit substrate, a TFT array substrate, a front plane laminate, and multiple conductive wires. The driving circuit substrate includes multiple first conductive pads. The TFT array substrate includes multiple second conductive pads. The TFT array substrate is located on the driving circuit substrate. The TFT array substrate is located between the driving circuit substrate and the front plane laminate. The conductive wires are electrically connected with the first conductive pads and the second conductive pads, respectively. The first conductive pads and the second conductive pads are located in the periphery region.

A semiconductor package may include a first redistribution layer (RDL); a first semiconductor chip on a top surface of the first RDL, the first semiconductor chip including a first circuit surface and a first bottom surface, the first circuit surface having first I/O pads thereon, the first I/O pads configured to electrically connect the first semiconductor chip to the first RDL via first wire bonds; a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second circuit surface and a second bottom surface; and a second RDL on the second semiconductor chip, the second RDL facing both the first circuit surface and the second circuit surface.

A semiconductor package may include a first redistribution layer (RDL); a first semiconductor chip on a top surface of the first RDL, the first semiconductor chip including a first circuit surface and a first bottom surface, the first circuit surface having first I/O pads thereon, the first I/O pads configured to electrically connect the first semiconductor chip to the first RDL via first wire bonds; a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second circuit surface and a second bottom surface; and a second RDL on the second semiconductor chip, the second RDL facing both the first circuit surface and the second circuit surface.

A display device includes a display region and a periphery region surrounding the display region. The display device includes an driving circuit substrate, a TFT array substrate, a front plane laminate, and multiple conductive wires. The driving circuit substrate includes multiple first conductive pads. The TFT array substrate includes multiple second conductive pads. The TFT array substrate is located on the driving circuit substrate. The TFT array substrate is located between the driving circuit substrate and the front plane laminate. The conductive wires are electrically connected with the first conductive pads and the second conductive pads, respectively. The first conductive pads and the second conductive pads are located in the periphery region.

A semiconductor package may include a first redistribution layer (RDL); a first semiconductor chip on a top surface of the first RDL, the first semiconductor chip including a first circuit surface and a first bottom surface, the first circuit surface having first I/O pads thereon, the first I/O pads configured to electrically connect the first semiconductor chip to the first RDL via first wire bonds; a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second circuit surface and a second bottom surface; and a second RDL on the second semiconductor chip, the second RDL facing both the first circuit surface and the second circuit surface.

A semiconductor package includes a package substrate. A first semiconductor chip is mounted on the package substrate. The first semiconductor chip includes a first chip region and first chip pads formed on a top surface of the first chip region. A second semiconductor chip is mounted on the package substrate. The second semiconductor chip includes a second chip region and second chip pads formed on a top surface of the second chip region. A boundary region having a groove divides the first chip region and the second chip region. The first chip region, the second chip region and the boundary region share a semiconductor substrate of a one-body type.

A semiconductor device has an interposer and a surface mount technology (SMT) component disposed on the interposer. The interposer is disposed on an active surface of a semiconductor die. The semiconductor die is disposed on a substrate. A first wire bond connection is formed between the interposer and semiconductor die. A second wire bond connection is formed between the interposer and substrate. A third wire bond connection is formed between the substrate and semiconductor die. An encapsulant is deposited over the substrate, semiconductor die, interposer, and SMT component. In one embodiment, the substrate is a quad flat non-leaded substrate. In another embodiment, the substrate is a land-grid array substrate, ball-grid array substrate, or leadframe.

A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.

A semiconductor package having a structure in which a decoupling capacitor is disposed to be adjacent with a semiconductor chip using a vertical chip interconnection (VCI) to improve power integrity. The semiconductor package includes a semiconductor substrate including a first finger pad and a second finger pad, a semiconductor chip mounted on the semiconductor substrate and including a first chip pad and a second chip pad, a bonding tape electrically connecting the first finger pad and the first chip pad, and a bonding wire electrically connecting the second finger pad and the second chip pad. Here, the bonding tape is formed to make contact with a sidewall of the semiconductor chip in a vertical direction of the semiconductor chip.