A semiconductor device is provided with a semiconductor chip. The semiconductor chip has a semiconductor substrate, an interconnect layer, an inductor and conductive pads (first pads). The interconnect layer is provided on the semiconductor substrate. The interconnect layer includes the inductor. The pads are provided on the interconnect layer. The pads are provided in a region within a circuit forming region of the semiconductor chip, which does not overlap the inductor.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

A structure of a conductive pad is provided. The structure includes a first conductive layer. A first dielectric layer covers the first conductive layer. A first contact hole is disposed within the first dielectric layer. A second conductive layer fills in the first conductive hole and extends from the first conductive hole to a top surface of the first dielectric layer so that the second conductive layer forms a step profile. A second dielectric layer covers the first dielectric layer and the second conductive layer. A third conductive layer contacts and covers the step profile.

A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); a predetermined signal line (w1) arranged in the wiring layer of the quantum chip (111); first shield wires (ws1) arranged in the wiring layer of the quantum chip (111) along the predetermined signal line (w1); a second shield wire (ws2) arranged in the wiring layer of the interposer (112); and a second connection part (150) that is provided between the interposer (112) and the quantum chip (111) so as to contact the first shield wires (ws1) and the second shield wire (ws2).

A first semiconductor die includes first semiconductor devices located over a first substrate, first interconnect-level dielectric material layers embedding first metal interconnect structures and located on the first semiconductor devices, and a first pad-level dielectric layer located on the first interconnect-level dielectric material layers and embedding first bonding pads. Each of the first bonding pads includes a first proximal horizontal surface and at least one first distal horizontal surface that is more distal from the first substrate than the first proximal horizontal surface is from the first substrate and has a lesser total area than a total area of the first proximal horizontal surface. A second semiconductor die including second bonding pads that are embedded in a second pad-level dielectric layer can be bonded to a respective distal surface of the first bonding pads.

A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.

An integrated circuit chip has an active surface and a chip pad arrangement on the active surface. The chip pad arrangement includes four pairs of chip pads arranged in two rows along a side edge of the active surface. Two pairs of chip pads are a first transmission differential pair chip pad and a first reception differential pair chip pad respectively. Positions of the two pairs of chip pads are not adjacent to each other and are in different rows. The other two pairs of chip pads are a second transmission differential chip pad and a second reception differential chip pad respectively. Positions of the other two pairs of chip pads are not adjacent to each other and are in different rows. In addition, a package substrate corresponding to the integrated circuit chip and an electronic assembly including the package substrate and the integrated circuit chip are also provided.

In one embodiment, an apparatus includes a first integrated circuit die with metal bonding pads that are co-planar with an external surface of the die and a second integrated circuit die with metal bonding pads that are co-planar with an external surface of the die. The first and second integrated circuit dies are coupled together such that their external surfaces are in contact and the metal pads of the first integrated circuit die are in direct contact with respective metal pads of the second integrated circuit die. The apparatus also includes an inductor formed at least partially by the metal pads of the first integrated circuit die and the metal pads of the second integrated circuit die.

A leadframe includes a peripheral frame, a plurality of lead pads, and a die attach pad (DAP). Each lead pad is physically connected to the peripheral frame by a respective connecting portion. The DAP is surrounded by the plurality of lead pads. The DAP includes a first protruding portion coupled to a first lead pad on a first side of the DAP and a second protruding portion coupled to a second lead pad on a second side of the DAP opposite the first side. The DAP does not comprise direct connections to the peripheral frame. The leadframe further includes two or more of the lead pads disposed on either side of the first lead pad on the first side of the DAP; and two or more of the lead pads disposed on either side of the second lead pad on the second side of the DAP.