Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Embodiments of an integrated circuit (IC) package including at least two first IC die having a first surface, an opposing second surface, and including memory circuitry, where the first IC die are stacked and coupled at respective first and second surfaces with a redistribution layer (RDL) between individual ones of the first IC die, the RDL including conductive pathways; a second IC die having a first surface, an opposing second surface, a third surface orthogonal to the first and second surfaces, and a conductive trace parallel to the first and second surfaces, the first surface of the second IC die is electrically coupled to conductive pathways in the RDL; and a third IC die, where the second surface of a bottom die of the stack of first IC die and the third surface of the second IC die are electrically coupled to the third IC die.

The present disclosure provides an electronic device. The electronic device includes an electronic component configured to laterally receive a power and configured to non-laterally transmit a signal. The electronic component includes an integrated circuit layer configured to receive the power.

An insulation chip includes a substrate, a first insulator, a first conductor, a second insulator, and a second conductor. The first conductor is embedded in the first insulator and exposed from the first insulator. The second insulator covers the first insulator and the first conductor. The second conductor is disposed on the second insulator. The first conductor, which includes an electrode pad, and the second conductor face each other in a thickness direction perpendicular to the upper surface of the first insulator. The second insulator includes insulating layers arranged on the first insulator and an exposing recess extending through the insulating layers to expose the electrode pad. The wall of the exposing recess is stepped such that the distance to the electrode pad increases from the upper surface of the first insulator toward the upper surface of the second insulator.