H01L2224/0905

PACKAGED DIE AND RDL WITH BONDING STRUCTURES THEREBETWEEN
20230253395 · 2023-08-10 ·

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

Packaged die and RDL with bonding structures therebetween

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

PACKAGED DIE AND RDL WITH BONDING STRUCTURES THEREBETWEEN
20210249399 · 2021-08-12 ·

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

Packaged die and RDL with bonding structures therebetween

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

Semiconductor module, base plate of semiconductor module, and method of manufacturing semiconductor device
10541219 · 2020-01-21 · ·

A base plate having concave curved portions (rearward-convex parts) curved in a rearward direction to be convex and have a predetermined curvature, is fixed to a surface of a cooling fin while being in contact with the surface of the cooling fin at vertices of the rearward-convex parts. A stacked substrate is bonded on a front surface of the base plate, at an area opposing the rearward-convex part. A spacer is provided on a rear surface of the base plate, at a position closer than an edge of a solder layer to a perimeter of the base plate. The spacer is sandwiched between the base plate and the cooling fin when a screw for fixing the base plate to the cooling fin is tightened and the spacer has a function of suppressing deformation of the base plate.

Packaged die and RDL with bonding structures therebetween

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

Semiconductor device with metal patterns having convex and concave sides

Reduction in reliability of a semiconductor device is suppressed. A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a plurality of semiconductor chips mounted on the plurality of metal patterns. Also, the plurality of metal patterns include metal patterns MPH and MPU which face each other. In addition, a region which is provided between these metal patterns MPH and MPU and which is exposed from the plurality of metal patterns extends so as to zigzag along an extending direction of the metal pattern MPH.

Stress-resilient chip structure and dicing process

A substrate includes a plurality of semiconductor chips arranged in a grid pattern and laterally spaced from one another by channel regions. The substrate includes a vertical stack of a semiconductor layer and at least one dielectric material layer embedding metal interconnect structures. The at least one dielectric material layer are removed along the channel regions and around vertices of the grid pattern so that each semiconductor chip includes corner surfaces that are not parallel to lines of the grid pattern. The corner surfaces can include straight surfaces or convex surfaces. The semiconductor chips are diced and subsequently bonded to a packaging substrate employing an underfill material. The corner surfaces reduce mechanical stress applied to the metal interconnect layer during the bonding process and subsequent thermal cycling processes.

Semiconductor Packages and Methods of Forming the Same
20180374836 · 2018-12-27 ·

Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

SEMICONDUCTOR MODULE, BASE PLATE OF SEMICONDUCTOR MODULE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20180337153 · 2018-11-22 · ·

A base plate having concave curved portions (rearward-convex parts) curved in a rearward direction to be convex and have a predetermined curvature, is fixed to a surface of a cooling fin while being in contact with the surface of the cooling fin at vertices of the rearward-convex parts. A stacked substrate is bonded on a front surface of the base plate, at an area opposing the rearward-convex part. A spacer is provided on a rear surface of the base plate, at a position closer than an edge of a solder layer to a perimeter of the base plate. The spacer is sandwiched between the base plate and the cooling fin when a screw for fixing the base plate to the cooling fin is tightened and the spacer has a function of suppressing deformation of the base plate.