The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a first substrate, and a first circuit layer positioned on the first substrate, a first redistribution structure positioned on the first circuit layer, and a second semiconductor structure including a second circuit layer positioned on the first redistribution structure, and a second substrate positioned on the second circuit layer. A layout of the first circuit layer and a layout of the second circuit layer are substantially the same and the first redistribution structure is electrically coupled to the first semiconductor structure and the second semiconductor structure.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a first substrate, and a first circuit layer positioned on the first substrate, a first redistribution structure positioned on the first circuit layer, and a second semiconductor structure including a second circuit layer positioned on the first redistribution structure, and a second substrate positioned on the second circuit layer. A layout of the first circuit layer and a layout of the second circuit layer are substantially the same and the first redistribution structure is electrically coupled to the first semiconductor structure and the second semiconductor structure.

A bonded assembly includes a first die containing first bonding pads having sidewalls that are laterally bonded to sidewalls of second bonding pads of a second die.

A bonded assembly includes a first die containing first bonding pads having sidewalls that are laterally bonded to sidewalls of second bonding pads of a second die.

A semiconductor package includes a substrate, a substrate pad on an upper surface of the substrate, first and second semiconductor chips stacked on the substrate in a first direction, wherein a sidewall of the first semiconductor chip and a sidewall of the second semiconductor chip are on the same plane, a first chip stack pad on an upper surface of the first semiconductor chip, a second chip stack pad on an upper surface of the second semiconductor chip, a first wire connecting the first chip stack pad with the substrate pad, and a second wire connecting the second chip stack pad with the substrate pad, wherein a first center of an upper surface of the first chip stack pad and a second center of an upper surface of the second chip stack pad are misaligned in the first direction.

The present invention relates to semiconductor devices and integrated circuit packaging. In a specific embodiment, a semiconductor device comprising a double-sided fanout die package is provided. On one surface of a main circuit board for the semiconductor device, regular single-sided flip-chip dies and tall SMT components are coupled, along with one or more double-sided fanout dies, which are stacked with corresponding sub-sized circuit boards that are also coupled to the same surface, with a smaller height than the tallest surface mount device. A portion of the metal routing and grounding connections in the main circuit board for one or more double-sided fanout dies can be transferred to the sub-sized circuit boards, thereby reducing the area of the main circuit board without increasing the number of circuit board layers. There are other embodiments as well.