A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.

A semiconductor package is provided. The semiconductor package includes: a first stack including a first semiconductor substrate; a through via that penetrates the first semiconductor substrate in a first direction; a second stack that includes a second face facing a first face of the first stack, on the first stack; a first pad that is in contact with the through via, on the first face of the first stack; a second pad including a concave inner side face that defines an insertion recess, the second pad located on the second face of the second stack; and a bump that connects the first pad and the second pad, wherein the bump includes a first upper bump on the first pad, and a first lower bump between the first upper bump and the first pad.

A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.

A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.

A semiconductor package may include a package substrate, a first semiconductor chip on the package substrate, and a second semiconductor chip on the first semiconductor chip. The first semiconductor chip comprises a chip substrate including a first surface and a second surface opposite to the first surface, a plurality of first chip pads between the package substrate and the chip substrate, and electrically connecting the first semiconductor chip to the package substrate, a plurality of second chip pads disposed on the second surface and between the second semiconductor chip and the second surface, and a plurality of redistribution lines on the second surface, the redistribution lines electrically connecting to the second semiconductor chip, and a plurality of bonding wires electrically connecting the redistribution lines to the package substrate.

A semiconductor package may include a package substrate, a first semiconductor chip on the package substrate, and a second semiconductor chip on the first semiconductor chip. The first semiconductor chip comprises a chip substrate including a first surface and a second surface opposite to the first surface, a plurality of first chip pads between the package substrate and the chip substrate, and electrically connecting the first semiconductor chip to the package substrate, a plurality of second chip pads disposed on the second surface and between the second semiconductor chip and the second surface, and a plurality of redistribution lines on the second surface, the redistribution lines electrically connecting to the second semiconductor chip, and a plurality of bonding wires electrically connecting the redistribution lines to the package substrate.

A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.

A semiconductor package is provided. The semiconductor package includes: a first stack including a first semiconductor substrate; a through via that penetrates the first semiconductor substrate in a first direction; a second stack that includes a second face facing a first face of the first stack, on the first stack; a first pad that is in contact with the through via, on the first face of the first stack; a second pad including a concave inner side face that defines an insertion recess, the second pad located on the second face of the second stack; and a bump that connects the first pad and the second pad, wherein the bump includes a first upper bump on the first pad, and a first lower bump between the first upper bump and the first pad.

A method for fabricating a semiconductor package may include: providing a first stack including a first pad; forming a lower bump including a first metal on the first pad; forming an upper bump including a second metal different from the first metal on the lower bump, wherein a Young's modulus of the second metal is lower than a Young's modulus of the first metal, and a melting point of the second metal is 400 degrees Celsius or higher; providing a second stack including a second pad, wherein the second pad includes a concave inner face defining an insertion recess; and bonding the first stack and the second stack by inserting the upper bump into the insertion recess of the second pad.