A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

A light emitting device including at least one LED stack, electrode pads disposed on the LED stack, and cantilever electrodes disposed on the electrode pads, respectively, in which each of the cantilever electrodes has a fixed edge that is fixed to one of the electrode pads and a free standing edge that is spaced apart from the one of the electrode pads.

A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.

A bulk acoustic wave resonator and a method of manufacturing the same are provided. The bulk acoustic wave resonator includes: a first carrier substrate; a barrier layer on a main surface of the first carrier substrate and configured to prevent an undesired conductive channel from being generated due to charge accumulation on the main surface; a buffer layer on a side of the barrier layer away from the first carrier substrate; a piezoelectric layer on a side of the buffer layer away from the barrier layer; a first electrode and a second electrode on opposite sides of the piezoelectric layer; a first passivation layer and a second passivation layer, respectively covering sidewalls of the first electrode and the second electrode; a dielectric layer between the first passivation layer and the buffer layer, wherein a first cavity is provided between the first passivation layer and the dielectric layer.

A display apparatus including a circuit board, at least one LED stack configured to emit light, electrode pads disposed on the at least one LED stack and electrically connected to the at least one LED stack, and electrodes disposed on the electrode pads and electrically connected to the electrode pads, respectively, in which each of the electrodes has a fixed portion that is fixed to one of the electrode pads and an extending portion that is spaced apart from the one of the electrode pads, and the electrodes include at least two metal layers having different thermal expansion coefficients from each other.

A method of manufacturing a semiconductor device includes arranging a mask on a support. The mask includes a first area and a second area. A substrate is arranged on the mask. The substrate has a mounting area and a non-mounting area. A solder paste is applied on the mounting area of the substrate. After applying the solder paste, at least one electronic device is arranged on the mounting area. A light soldering process is performed by emitting light on the substrate from a light source above the substrate. The first area of the mask is positioned under the non-mounting area and the second area of the mask is positioned under the mounting area.

A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

At least one circuit element may be formed on a front side of a ringed substrate, and the ringed substrate may be mounted on a mounting chuck. The mounting chuck may have an inner raised portion configured to receive the thinned portion of the substrate thereon, and a recessed ring around a perimeter of the mounting chuck configured to receive the outer ring of the ringed substrate therein. At least one solder bump may be formed that is electrically connected to the at least one circuit element, while the ringed wafer is disposed on the mounting chuck.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.