Patent classifications
H01L2224/17104
PACKAGE COMPRISING A SUBSTRATE WITH A PAD INTERCONNECT COMPRISING A PROTRUSION
A package that includes a substrate and an integrated device coupled to the substrate. The substrate includes at least one dielectric layer and a plurality of interconnects comprising a first pad interconnect. The first pad interconnect comprises a first portion comprising a first width and a second portion comprising a second width that is different than the first width.
SOLDER RESIST STRUCTURE TO MITIGATE SOLDER BRIDGE RISK
Some embodiments relate to a semiconductor structure. The semiconductor structure includes a first substrate including a first plurality of conductive pads that are laterally spaced apart from one another on the first substrate. A first plurality of conductive bumps are disposed on the first plurality of conductive pads, respectively. A multi-tiered solder-resist structure is disposed on the first substrate and arranged between the first plurality of conductive pads. The multi-tiered solder-resist structure has different widths at a different heights over the first substrate and contacts sidewalls of the first plurality of conductive bumps to separate the first plurality of conductive bumps from one another.
Method of manufacturing semiconductor package structure
A semiconductor package structure includes a redistribution (RDL) layer, a first chip, at least one second chip, an encapsulant and a third chip. The redistribution layer has a first surface and a second surface opposite to each other. The first chip is over the first surface of the redistribution layer and electrically connected to the redistribution layer. The second chip is over the first surface of the redistribution layer. The second chip includes a plurality of through via structures. The encapsulant is over the first surface of the distribution layer, wherein the encapsulant surrounds the first chip and the second chip. The third chip is over the encapsulant and electrically connected to the first chip through the through via structures of the second chip and the redistribution layer.
CERAMIC LAMINATED SUBSTRATE, MODULE, AND METHOD OF MANUFACTURING CERAMIC LAMINATED SUBSTRATE
Provided is a ceramic laminated substrate which is formed on an electronic component to be mounted and is less likely to cause mounting defects even if there is irregularity in the height of solders. The ceramic laminated substrate includes: a ceramic laminate on which ceramic layers are laminated; via conductors; terminal electrodes; and a land electrode. The land electrode has a first land electrode and a second land electrode that are used to join different terminal electrodes of a single electronic component. The area of the first land electrode is smaller than the area of the second land electrode, and the first land electrode has a bump electrode and a plating layer, the second land electrode has a membrane electrode and plating layers, and the height of the first land electrode is formed higher than the height of the second land electrode.
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
MULTILAYER SUBSTRATE, COMPONENT MOUNTED BOARD, AND METHOD FOR PRODUCING COMPONENT MOUNTED BOARD
A multilayer substrate includes a flexible element assembly including a principal surface, a first to an n-th external electrode disposed on the principal surface, and at least one first dummy conductor disposed inside the element assembly and being in a floating state. When the element assembly is viewed from a normal direction that is normal to the principal surface, a distance between an m-th external electrode and a nearest external electrode therefrom among the first to the n-th external electrodes is defined as a distance Dm, an average of distances D1 to Dn is defined as an average Dave, and when the element assembly is viewed from the normal direction, an area within a circle with a center on the m-th external electrode and with a radius of Dm is defined as an area Am. The first dummy conductor is located in at least one area Am with a radius of Dm smaller than the average Dave when viewed from the normal direction.
CHIP PACKAGE STRUCTURE
A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a bump and a first dummy bump between the chip and the substrate. The bump is electrically connected between the chip and the substrate, the first dummy bump is electrically insulated from the substrate, and the first dummy bump is wider than the bump. The chip package structure includes a first dummy solder layer under the first dummy bump and having a curved bottom surface facing and spaced apart from the substrate.
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE
A semiconductor package includes an interposer having a first surface and a second surface opposite to the first surface and including a plurality of bonding pads, and first and second semiconductor devices on the interposer. Each of the plurality of bonding pads includes a first pad pattern provided to be exposed from the first surface and having a first width and a second pad pattern provided on the first pad pattern and having a second width greater than the first width.
Semiconductor package and fabrication method thereof
A semiconductor package includes an interconnect component surrounded by a molding compound. The interconnect component comprises a first RDL structure. A second RDL structure is disposed on the interconnect component. A plurality of first connecting elements is disposed on the second RDL structure. A polish stop layer covers a surface of the interconnect component. A plurality of second connecting elements is disposed on and in the polish stop layer. At least one semiconductor die is mounted on the second connecting elements.
Printed circuit board and semiconductor package using the same
A printed circuit board (PCB) includes: a base substrate including a top surface including an electronic device mounting region; chip connection pads that are provided on the electronic device mounting region; a conductive pattern group that is provided on the top surface of the base substrate and includes an extended conductive pattern extending between two adjacent chip connection pads from among the chip connection pads, the extended conductive pattern being spaced apart from each of the two adjacent chip connection pads; and a solder resist layer that covers a part of the extended conductive pattern and is spaced apart from the chip connection pads.