A mechanism is described for facilitating stretchable and self-healing solders in microelectronics manufacturing environments. An apparatus of embodiments, as described herein, includes one or more solders associated with a microelectronics component, where the one or more solders contain a liquid metal and are wrapped in an encapsulation material. The apparatus further includes a substrate coupled to the one or more solders.

A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

A stacked-chip assembly including a plurality of IC chips or die that are stacked, and electrically coupled by solder bonds. In accordance with some embodiments described further below, the solder bonds are to contact a back-side land that includes a diffusion barrier to reduce intermetallic formation and/or other solder-induced reliability issues. The back-side land may include an electrolytic nickel (Ni) barrier layer separating solder from a back-side redistribution layer trace. This electrolytic Ni may be of high purity, which at least in part, may enable the backside metallization stack to be of minimal thickness while still functioning as a diffusion barrier. In some embodiments, the back-side land composition and architecture is distinct from a front-side land composition and/or architecture.

A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.

A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.

First and second integrated devices each have an optical component and a plurality of interconnect structures disposed one edge thereon. The first edge surface of the second integrated device is positioned contiguous to the first edge surface of the first integrated device. The interconnect structures disposed on the first integrated device are in physical contact with the interconnect structures disposed on the edge surface of the second integrated device so as to provide alignment for conveying at least one signal between the optical components on the first and second integrated devices.

Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.