H01L2224/2201

Semiconductor package and method of manufacturing the semiconductor package

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

SUBMODULE SEMICONDUCTOR PACKAGE

Implementations of semiconductor devices may include a die coupled over a lead frame, a redistribution layer (RDL) coupled over the die, a first plurality of vias coupled between the RDL and the die, and a second plurality of vias coupled over and directly to the lead frame. The second plurality of vias may be adjacent to an outer edge of the semiconductor device and may be electrically isolated from the die.

Semiconductor packages having thermal through vias (TTV)

A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

Fan out packaging pop mechanical attach method

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a mold over and around a first die and a first via. The semiconductor package has a conductive pad of a first redistribution layer disposed on a top surface of the first die and/or a top surface of the mold. The semiconductor package includes a second die having a solder ball coupled to a die pad on a bottom surface of the second die, where the solder ball of the second die is coupled to the first redistribution layer. The first redistribution layer couples the second die to the first die, where the second die has a first edge and a second edge, and where the first edge is positioned within a footprint of the first die and the second edge is positioned outside the footprint of the first die.

Component carrier and method of manufacturing the same

A component carrier includes a stack having at least one electrically insulating layer structure and/or at least one electrically conductive layer structure; a heat removing and electrically conductive base structure; a component which is connected to the base structure so as to at least partially protrude from the base structure and so as to be laterally at least partially covered by an electrically insulating material of the stack; and an electrically conductive top structure on or above a top main surface of the component. A method of manufacturing such a component carrier is disclosed.

SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

Fan-out packaging structure and method

The present disclosure provides a fan-out chip packaging structure and a method to fabricate the fan-out chip package. The fan-out chip packaging structure includes a first redistribution layer, a second redistribution layer, metal connecting posts, a semiconductor chip, a first packaging layer, a stacked chip package, a passive element, a filling layer, a metal bumps, and a second packaging layer. By means of the present disclosure, various chips having different functions can be integrated into one package structure, thereby improving the integration level of the fan-out packaging structure. By means of the first redistribution layer, the second redistribution layer, and the metal connecting posts, a three-dimensional vertically stacked package is achieved. In this way, the integration level of the packaging structure can be effectively improved, and the conduction path can be effectively shortened, thereby reducing power consumption, increasing the transmission speed, and increasing the data processing capacity.

SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

Semiconductor package and method of manufacturing the semiconductor package

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

METHOD OF FORMING SEMICONDUCTOR PACKAGES HAVING THERMAL THROUGH VIAS (TTV)

A method of forming a semiconductor package includes the following steps. A redistribution layer structure is formed over a first die and a dummy die, wherein the redistribution layer structure is directly electrically connected to the first die. An insulating layer is formed, wherein the insulating layer is disposed opposite to the redistribution layer structure with respect to the first die. At least one thermal through via is formed in the insulating layer.