A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A display device includes a substrate including a display area and a pad area, a plurality of pad electrodes disposed in the pad area on the substrate, a circuit board disposed to overlap at least a portion of the pad area on the substrate, and an anisotropic conductive layer disposed in the pad area between the substrate and the circuit board. The circuit board includes a base substrate and a plurality of bump electrodes disposed on a lower surface of the base substrate. The anisotropic conductive layer includes an adhesive layer and a plurality of conductive particles arranged in the adhesive layer. Each of the conductive particles includes a core, a first conductive film disposed on the core in a way such that at least a portion of the core is exposed, and a second conductive film entirely covering the core and the first conductive film.

A semiconductor device includes: a plurality of semiconductor chips stacked on a substrate in a vertical direction; a filler structure including a plurality of horizontal underfill layers formed between adjacent semiconductor chips of the plurality of semiconductor chips and between the substrate and the stack of semiconductor chips, and including underfill sidewalls formed around the horizontal underfill layers and the plurality of semiconductor chips; and a molding resin surrounding the plurality of semiconductor chips at least on side surfaces of the plurality of semiconductor chips. The underfill sidewalls include a recess pattern, which is disposed on and along the side surfaces of at least one of the plurality of semiconductor chips, and is recessed in a direction parallel to an upper surface of the substrate at locations where the recess pattern meets the substrate.

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.

Semiconductor dies formed on a wafer may be picked from the wafer with little or no stress, thus preventing cracking and damage to the semiconductor dies. A die attach film (DAF) layer is laminated onto an inactive surface of the wafer and the DAF layer is cut in the outline of the dies. The inactive surface of the wafer may then be supported on a vacuum chuck without using a dicing tape, and dies transferred from the wafer using a pick and place robot.

A semiconductor device according to the present disclosure has a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip, in which the support piece contains a cured product of a thermosetting resin composition, or includes a layer containing a cured product of a thermosetting resin composition, and a resin layer or a metal layer.

An anisotropic conductive film has first and second connection layers formed on a first layer surface. The first connection layer is a photopolymerized resin layer, and the second is thermo- or photo-cationically, anionically, or radically polymerizable resin layer. On the surface of the first connection layer on a second connection layer side, conductive particles for anisotropic conductive connection are in a single layer. The first connection layer has fine projections and recesses in a surface. An anisotropic conductive film of another aspect has first, second, and third connection layers layered in sequence. The first layer formed of photo-radically polymerized resin. The second and third layers are formed of thermo-cationically or thermo-anionically polymerizable resin, photo-cationically or photo-anionically polymerizable resin, thermo-radically polymerizable resin, or photo-radically polymerizable resin. On a surface of the first connection layer on a second connection layer side, conductive particles for anisotropic conductive connection are in a single layer.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.