PROBLEM: To provide a multi-layer preform sheet capable of forming a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion and so forth that are less likely to produce the Kirkendall void.

SOLUTION: A multi-layer preform sheet having at least a first layer and a second layer, the first layer being composed of a solder material that contains an intermetallic compound, and the second layer containing a first metal having a melting point of 300° C. or above, and a second metal capable of forming an intermetallic compound with the first metal.

Disclosed are exemplary embodiments of systems and methods of applying thermal interface materials (TIMs). The thermal interface materials may be applied to a wide range of substrates and components, such as lids or integrated heat spreaders of integrated circuit (IC) packages, board level shields, heat sources (e.g., a central processing unit (CPU), etc.), heat removal/dissipation structures or components (e.g., a heat spreader, a heat sink, a heat pipe, a vapor chamber, a device exterior case or housing, etc.), etc.

Embodiments may relate to a method of forming a microelectronic package with an integrated heat spreader (IHS). The method may include placing a solder thermal interface material (STIM) layer on a face of a die that is coupled with a package substrate; coupling the IHS with the STIM layer and the package substrate such that the STIM is between the IHS and the die; performing formic acid fluxing of the IHS, STIM layer, and die; and dispensing, subsequent to the formic acid fluxing, sealant on the package substrate around a periphery of the IHS.

Embodiments may relate to a method of forming a microelectronic package with an integrated heat spreader (IHS). The method may include placing a solder thermal interface material (STIM) layer on a face of a die that is coupled with a package substrate; coupling the IHS with the STIM layer and the package substrate such that the STIM is between the IHS and the die; performing formic acid fluxing of the IHS, STIM layer, and die; and dispensing, subsequent to the formic acid fluxing, sealant on the package substrate around a periphery of the IHS.

This film-shaped firing material is a film-shaped firing material containing sinterable metal particles and a binder component, in which, when the average thickness of the portion of the film-shaped firing material excluding the edge portion is deemed 100%, the average thickness of the edge portion of the film-shaped firing material is at least 5% thicker than the average thickness of the portion of the film-shaped firing material excluding the edge portion.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

The present invention relates to a film-shaped firing material (1) which contains: sinterable metal particles (10); a binder component (20) that is a solid at room temperature; and a liquid component (30) that is a liquid at room temperature, the liquid component having a boiling point from 300 to 450° C.

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound body 1 according to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding core 2 into a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material 11; and a sheet for sintering bonding 10, comprising an electrically conductive metal containing sinterable particle and a binder component.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.