Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

In a method for producing an electronic part mounting substrate wherein an electronic part 14 is mounted on one major surface (a surface to which the electronic part 14 is to be bonded) of the metal plate 10 of copper, or aluminum or the aluminum alloy (when a plating film 20 of copper is formed on the surface), the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) is surface-machined to be coarsened so as to have a surface roughness of not less than 0.4 μm, and then, a silver paste is applied on the surface-machined major surface (or the surface-machined surface of the plating film 20 of copper) to arrange the electronic part 14 thereon to sinter silver in the silver paste to form a silver bonding layer 12 to bond the electronic part 14 to the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) with the silver bonding layer 12.

Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip.

An embodiment of the present invention provides a method for producing a bonded object. The method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa. The copper bonding paste contains metal particles and a dispersion medium, wherein the content of metal particles is at 50 mass % or more with respect to the total mass of the copper bonding paste, and the metal particles contain 95 mass % or more of submicro copper particles with respect to the total mass of the metal particles.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

A method for producing a layer including a connecting medium on an assembly partner is provided. The method includes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.