H01L2224/29021

DISPLAY DEVICE AND TILED DISPLAY DEVICE

A display device includes a substrate, a plurality of electrode pads including a first electrode pad and a common electrode pad on the substrate, a light emitting element including a first contact electrode on the first electrode pad and a second contact electrode on the common electrode pad, a conductive adhesive member including a plurality of conductive balls connecting the first electrode pad and the first contact electrode and connecting the common electrode pad and the second contact electrode, and a plurality of protrusions on the substrate and protruding in a thickness direction of the substrate. First protrusions from among the plurality of protrusions overlap the electrode pads in the thickness direction of the substrate.

DISPLAY DEVICE
20230213975 · 2023-07-06 ·

A display device according to an example embodiment of the present disclosure may include a stretchable lower substrate; a lower pattern layer disposed on the lower substrate and including a plurality of lower plate patterns and a plurality of lower line patterns; a plurality of pixel circuits disposed on each of the plurality of lower plate patterns; a plurality of lower stretched lines disposed on each of the plurality of lower line patterns; an upper pattern layer disposed on the lower pattern layer and including a plurality of upper plate patterns and a plurality of upper line patterns; a plurality of light emitting elements disposed on each of the plurality of upper plate patterns; and a plurality of upper stretched lines disposed on each of the plurality of upper line patterns, so that a uniform power may be supplied.

Segmented pedestal for mounting device on chip

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME
20220392989 · 2022-12-08 ·

A display device includes a driving member which provides an electrical signal and includes a connection terminal which transmits the electrical signal, a pad electrode which receives the electrical signal from the driving member and is electrically connected to the connection terminal of the driving member, an organic layer on the pad electrode, the organic layer including a side surface defining an opening of the organic layer which exposes the pad electrode to outside the organic layer and within the opening, a protrusion protruding from the side surface, and a connection conductive layer which electrically connects the pad electrode to the connection terminal, within the opening of the organic layer, where the connection conductive layer covers each of the pad electrode which is exposed by the opening of the organic layer, the side surface of the organic layer, and the protrusion of the organic layer.

METHOD FOR MANUFACTURING DISPLAY PANEL, DISPLAY PANEL, AND DISPLAY APPARATUS

A method for manufacturing a display panel includes providing a backplate, forming bonding parts on backplate, forming an auxiliary layer on backplate, releasing light-emitting elements onto the auxiliary layer such that electrodes of the light-emitting elements are in contact with the first parts to form an intermediate backplate, arranging the intermediate backplate under first predetermined condition under which a fluidity of the first part is greater than that of the second part, and bonding the electrodes and the bonding parts to form an eutectic bonding layer, and arranging the intermediate backplate under second predetermined condition such that the first and second parts form solid-state first and second members. The backplate includes first and second regions. The bonding parts are located in the first regions. The auxiliary layer covers the backplate and the bonding parts. The auxiliary layer includes first and second parts respectively located in the first and second regions.

Display Device
20230121603 · 2023-04-20 ·

In order to achieve the above-described objects, according to an aspect of the present disclosure, a display device includes a substrate which includes an active area and a non-active area extending from the active area and including a pad area and is formed of any one of a transparent conducting oxide and an oxide semiconductor; a plurality of inorganic insulating layers disposed on the substrate; a dam member having one end disposed on the pad area and the other end disposed at the outside of the substrate; and a plurality of flexible films which is disposed to cover the dam member and has one end disposed in the pad area. Accordingly, the dam member which covers the pad area is formed to minimize the crack of the plurality of inorganic insulating layers at the edge of the substrate.

DISPLAY APPARATUS INCLUDING A LOW BRIGHTNESS AREA

A display apparatus includes: a substrate; and a plurality of light emitting diode (LED) elements disposed on the substrate in a matrix form, wherein the plurality of LED elements includes: a first LED element including a first light emitting layer, a second LED element including a second light emitting layer, and a third LED element including a third light emitting layer, wherein the first LED element, the second LED element, and the third LED element are disposed in a column direction of the plurality of LED elements, and constitute one pixel together, and wherein the first light emitting layer, the second light emitting layer, and the third light emitting layer respectively comprises a first weak light-emitting area, a second weak light-emitting area, and a third weak light-emitting area that are aligned in a line in the column direction.

HIGH RELIABILITY WAFER LEVEL SEMICONDUCTOR PACKAGING
20170236761 · 2017-08-17 · ·

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

QUANTUM DEVICE AND METHOD OF MANUFACTURING THE SAME

A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); a predetermined signal line (w1) arranged in the wiring layer of the quantum chip (111); first shield wires (ws1) arranged in the wiring layer of the quantum chip (111) along the predetermined signal line (w1); a second shield wire (ws2) arranged in the wiring layer of the interposer (112); and a second connection part (150) that is provided between the interposer (112) and the quantum chip (111) so as to contact the first shield wires (ws1) and the second shield wire (ws2).

Semiconductor device and method of forming modular 3D semiconductor package with horizontal and vertical oriented substrates

A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.