A semiconductor package and a method of manufacturing the same, and an imaging apparatus are provided. The method includes preparing a substrate having a first connection region and a sensor chip having a second connection region. A first bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the first connection region. A second bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the second connection region. The substrate and the sensor chip are overlapped to align and tightly compress the first and second bonding layers, to obtain a composite structure. The composite structure is treated at a temperature of 30 to 180° C., under a pressure of 1 to 8 MPa, and with an ultrasonic of 10 to 30 kHz to form the first and second bonding layers into a eutectic.

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

A multilayer composite bonding material for transient liquid phase bonding a semiconductor device to a metal substrate includes thermal stress compensation layers sandwiched between a pair of bonding layers. The thermal stress compensation layers may include a core layer with a first stiffness sandwiched between a pair of outer layers with a second stiffness that is different than the first stiffness such that a graded stiffness extends across a thickness of the thermal stress compensation layers. The thermal stress compensation layers have a melting point above a sintering temperature and the bonding layers have a melting point below the sintering temperature. The graded stiffness across the thickness of the thermal stress compensation layers compensates for thermal contraction mismatch between the semiconductor device and the metal substrate during cooling from the sintering temperature to ambient temperature.

A multilayer composite bonding material for transient liquid phase bonding a semiconductor device to a metal substrate includes thermal stress compensation layers sandwiched between a pair of bonding layers. The thermal stress compensation layers may include a core layer with a first stiffness sandwiched between a pair of outer layers with a second stiffness that is different than the first stiffness such that a graded stiffness extends across a thickness of the thermal stress compensation layers. The thermal stress compensation layers have a melting point above a sintering temperature and the bonding layers have a melting point below the sintering temperature. The graded stiffness across the thickness of the thermal stress compensation layers compensates for thermal contraction mismatch between the semiconductor device and the metal substrate during cooling from the sintering temperature to ambient temperature.

A display device according to an embodiment of the present invention includes: an electrode; a light-emitting layer formed on the electrode; and a metal-containing film formed on the light-emitting layer and containing a first metallic element. The metal-containing film includes a metal layer forming an interface of the metal-containing film on the side of the light-emitting layer, formed of a simple substance of the first metallic element or an alloy of the first metallic element and a second metallic element, and a light-transmitting oxide layer forming an interface of the metal-containing film on the opposite side from the interface on the side of the light-emitting layer, formed of an oxide of the first metallic element, and having a light-transmitting property.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

A multilayer composite bonding material with a plurality of thermal stress compensation layers is provided. The plurality of thermal stress compensation layers include a metal core layer, a pair of particle layers extending across the metal core layer such that the metal core layer is sandwiched between the pair of particle layers, and a pair of metal outer layers extending across the pair of particle layers such that the pair of particle layers are sandwiched between the pair of metal outer layers. A pair of low melting point (LMP) bonding layers extend across the pair of metal outer layers. The metal core layer, the pair of particle layers, and the pair of metal outer layers each have a melting point above a transient liquid phase (TLP) sintering temperature, and the pair of LMP bonding layers each have a melting point below the TLP sintering temperature.

A multilayer composite bonding material with a plurality of thermal stress compensation layers is provided. The plurality of thermal stress compensation layers include a metal core layer, a pair of particle layers extending across the metal core layer such that the metal core layer is sandwiched between the pair of particle layers, and a pair of metal outer layers extending across the pair of particle layers such that the pair of particle layers are sandwiched between the pair of metal outer layers. A pair of low melting point (LMP) bonding layers extend across the pair of metal outer layers. The metal core layer, the pair of particle layers, and the pair of metal outer layers each have a melting point above a transient liquid phase (TLP) sintering temperature, and the pair of LMP bonding layers each have a melting point below the TLP sintering temperature.