In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

The invention comprises a butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average of at least two silicon-bonded alkenyl groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate. The invention also comprises related silicone formulations made by removing a portion, or all, of (D) butyl acetate therefrom, and related cured products, methods, articles and devices.

An apparatus comprising a substrate with multiple electronic devices. An interconnect structure formed on a first side of the substrate interconnects the electronic devices. Dummy TSVs each extend through the substrate and form an alignment mark on a second side of the substrate. Functional TSVs each extend through the substrate and electrically connect to the electronic devices. A redistribution layer (RDL) formed on the second side of the substrate interconnects ones of the dummy TSVs with ones of the functional TSVs. Step heights of the RDL over the functional TSVs are less than a predetermined value, whereas step heights of the RDL over the dummy TSVs are greater than the predetermined value.

A light emitting device and a light emitting module both having narrow spacing between emission faces, as well as a method of manufacturing light emitting device and a method of manufacturing light emitting module are provided.

A light emitting device 100 includes element structure bodies 15, at least one of the element structure bodies including a submount substrate 10, a light emitting element 20 disposed on the submount substrate 10, a light transmitting member 30 disposed on the light emitting element 20, and a first cover member 50 covering the lateral faces of the light emitting element 20 on the submount substrate 10, and a second cover member 60 supporting the element structure bodies 15 by covering the lateral faces of the element structure bodies 15.

A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.

A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.

In one embodiment, methods for making semiconductor devices are disclosed.

In one embodiment, methods for making semiconductor devices are disclosed.

Various embodiments of the teachings herein include a method for joining and insulating a power electronic semiconductor component with contact surfaces to a substrate. In some embodiments, the method includes: preparing the substrate with a metallization defining an installation slot having joining material, wherein the substrate comprises an organic or a ceramic wiring support; arranging an electrically insulating film and the semiconductor component on the substrate, such that the contact surfaces of the semiconductor component facing the substrate are omitted from the film and regions of the semiconductor component exposed by the contact surfaces are insulated at least in part by the film from the substrate and from the contact surfaces; and joining the semiconductor component to the substrate and electrically insulating the semiconductor component at least in part by the film in one step.