H01L2224/29301

SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

Power module package and method of manufacturing the same

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

Power module package and method of manufacturing the same

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

MICROELECTRONIC STRUCTURES INCLUDING BRIDGES

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

MICROELECTRONIC STRUCTURES INCLUDING BRIDGES

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
20210384109 · 2021-12-09 · ·

A semiconductor device includes a base body, a semiconductor chip deposited on a top surface of the base body, an encapsulating resin covering the base body and the semiconductor chip, a ring-shaped plug, and at least one stand-up terminal. The ring-shaped plug has an insulating property, is buried in a part of an upper part of the encapsulating resin while being aligned with respect to the base body, and has a top surface exposed to an outside of the encapsulating resin. The at least one stand-up terminal includes a vertical part penetrating the ring-shaped plug and extending in a direction perpendicular to the top surface of the base body, and has a lower end electrically connected to an electrode of the semiconductor chip inside the encapsulating resin and an upper end exposed to the outside of the encapsulating resin. The ring-shaped plug is fixed and bonded to a circumference of a side surface of the vertical part of the stand-up terminal.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
20210384109 · 2021-12-09 · ·

A semiconductor device includes a base body, a semiconductor chip deposited on a top surface of the base body, an encapsulating resin covering the base body and the semiconductor chip, a ring-shaped plug, and at least one stand-up terminal. The ring-shaped plug has an insulating property, is buried in a part of an upper part of the encapsulating resin while being aligned with respect to the base body, and has a top surface exposed to an outside of the encapsulating resin. The at least one stand-up terminal includes a vertical part penetrating the ring-shaped plug and extending in a direction perpendicular to the top surface of the base body, and has a lower end electrically connected to an electrode of the semiconductor chip inside the encapsulating resin and an upper end exposed to the outside of the encapsulating resin. The ring-shaped plug is fixed and bonded to a circumference of a side surface of the vertical part of the stand-up terminal.