Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
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H01L2224/29
of an individual layer connector
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H01L2224/29001
Core members of the layer connector
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H01L2224/29198
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/294
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29401
the principal constituent melting at a temperature of less than 400°C
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H01L2224/29405
Gallium [Ga] as principal constituent
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H01L2224/29405

BONDING FILM, TAPE FOR WAFER PROCESSING, METHOD FOR PRODUCING BONDED BODY, AND BONDED BODY AND PASTED BODY
20220139864 · 2022-05-05 · ·

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

BONDING FILM, TAPE FOR WAFER PROCESSING, METHOD FOR PRODUCING BONDED BODY, AND BONDED BODY AND PASTED BODY
20220139864 · 2022-05-05 · ·

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.