An anisotropic conductive film (ACF), a bonding structure, and a display panel, and their fabrication methods are provided. The ACF includes a resin gel and a plurality of conductive particles dispersed in the resin gel. The plurality of conductive particles is aligned and connected, in response to an electric field, to form a conduction path in the resin gel. The bonding structure includes the anisotropic conductive film (ACF) sandwiched between first and second substrates. The display panel includes the bonding structure.

An anisotropic conductive film (ACF), a bonding structure, and a display panel, and their fabrication methods are provided. The ACF includes a resin gel and a plurality of conductive particles dispersed in the resin gel. The plurality of conductive particles is aligned and connected, in response to an electric field, to form a conduction path in the resin gel. The bonding structure includes the anisotropic conductive film (ACF) sandwiched between first and second substrates. The display panel includes the bonding structure.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

In some aspects, it is disclosed an electrical support for at least one electrical contact pad, including an insulating viscoelastic matrix, and at least one elastically deformable structure made of a conductive material to form an open web, the at least one structure including at least a core part which is embedded within the insulating matrix, and at least one connection part which extends out of the insulating matrix and is configured to be connected to the at least one electrical contact pad, wherein the structure includes a stiffer section corresponding substantially to the core part of the structure and at least one more flexible section corresponding substantially to the at least one connection part of the structure.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A bonding element includes a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.