Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.

A semiconductor device encompasses a mounting member having a copper-based wiring layer; first covering layer which contains nickel, covering the wiring layer so that a part of upper surface of the wiring layer is exposed in opening; joint layer metallurgically joined to the wiring layer in the opening; second covering layer which contains nickel, metallurgically joined to the joint layer on upper surface of the joint layer; semiconductor chip having bottom surface covered with the second covering layer. The joint layer has lower layer in contact with the wiring layer, upper layer in contact with the second covering layer, and intermediate layer between the lower layer and the upper layer, the lower layer and the upper layer have intermetallic compounds as main components which contain tin, copper and nickel, and the intermediate layer is alloy containing tin as the main component and no lead.

A bonding structure to be formed in bonding of a Si semiconductor or the like and a substrate, as materials to be bonded, with transient liquid phase diffusion bonding. The bonding structure includes a bonding portion presenting a specific material texture. A metal composition of the bonding portion includes 78.0% by mass or more and 80.0% by mass or less of Ag, 20.0% by mass or more and 22.0% by mass or less of Sn, and an inevitable impurity element. A characteristic material texture configured from an island-like Ag phase including 95% by mass or more of Ag and a Ag.sub.3Sn phase including a Ag.sub.3Sn intermetallic compound and surrounding the island-like Ag phase is presented in observation of any cross section of the bonding portion.

Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.

Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.

Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where AlAg alloy layers are provided on both sides of an AgZnAl alloy layer to join the Al substrates to each other.

A semiconductor device encompasses a mounting member having a copper-based wiring layer; first covering layer which contains nickel, covering the wiring layer so that a part of upper surface of the wiring layer is exposed in opening; joint layer metallurgically joined to the wiring layer in the opening; second covering layer which contains nickel, metallurgically joined to the joint layer on upper surface of the joint layer; semiconductor chip having bottom surface covered with the second covering layer. The joint layer has lower layer in contact with the wiring layer, upper layer in contact with the second covering layer, and intermediate layer between the lower layer and the upper layer, the lower layer and the upper layer have intermetallic compounds as main components which contain tin, copper and nickel, and the intermediate layer is alloy containing tin as the main component and no lead.