A semiconductor device includes a first conductive layer with first and second sections separated in a first direction. A first chip is on the first section and has a first, second and third electrodes. A second chip is on the second section and has a fourth and fifth electrode. A second conductive layer is between the sections of the first conductive layer in the first direction. The second conductive layer has a first connected section to which the second electrode is connected, a second connected section to which to the fifth electrode is connected, and a first clearance portion between the first and second connected sections in the first direction. A third conductive layer is spaced from the first conductive layer and the second conductive layer and is connected to the third electrode.

A conductive plate includes a first slit formed in the space between a first chip area and a second chip area, a second slit formed in the space between the first chip area and a terminal area, and a third slit formed in the space between the second chip area and the terminal area. The first slit is a continuous line that penetrates through the conductive plate, whereas the second and third slits are continuous lines that do not penetrate through the conductive plate.

An electronic device includes a substrate, a first pad disposed on the substrate, a second pad disposed opposite to the first pad, and a conductive particle disposed between the first pad and the second pad. The first pad has a recess, and a part of the conductive particle sinks in the recess.

An object is to provide a technique capable of suppressing an occurrence of a non-filled portion. A semiconductor device includes a base plate, a case, and a semiconductor element. The semiconductor element is disposed in a space of the base plate and the case. The semiconductor device includes a lead electrode. The lead electrode is connected to an upper surface of the semiconductor element in the space. The semiconductor device includes a raised portion. The raised portion is disposed on an upper surface of the lead electrode in the space. The semiconductor device includes a sealing resin. The sealing resin seals the semiconductor element and the lead electrode in the space.

An electronic device includes a substrate, a first pad disposed on the substrate and having a first conductive layer and a second conductive layer disposed on the first conductive layer, a first insulating layer disposed on the first conductive layer and having at least one opening exposing a portion of the first conductive layer, and a second pad disposed opposite to the first pad. The second conductive layer is disposed on the first conductive layer in the at least one opening and extends over the at least one opening to be disposed on a portion of the insulating layer. A bottom of the least one opening of the first insulating layer has an arc edge in a top view of the electronic device.

A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A remetalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the remetalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

The present disclosure describes a method to form a semiconductor structure having an oxide structure on a wafer edge. The method includes forming a device layer on a first substrate, forming an interconnect layer on the device layer, forming an oxide structure on a top surface and along a sidewall surface of the interconnect layer, forming a bonding layer on the oxide structure and the interconnect layer, and bonding the device layer to a second substrate with the bonding layer.

A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A re-metalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the re-metalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

An electronic device includes a substrate, a first pad disposed on the substrate, a second pad disposed opposite to the first pad, and a conductive particle disposed between the first pad and the second pad. The first pad has a recess, and a part of the conductive particle sinks in the recess.

A semiconductor package (1, 1, 1), the package (1, 1, 1) comprising a first substrate (2) comprising at a front cavity side (5) a plurality of cavities (6, 6), each of the cavities (6, 6) having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6) at the front cavity side (5) of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6) are electrically conductive bonded in a material-locking manner, and a second substrate (3), the second substrate (3) being attached with a connection side (12, 13) to the front cavity side (5) of the first substrate (2) thereby encapsulating the semiconductor elements (16, 17) located within the corresponding cavities (6, 6) at the front cavity side (5) of the first substrate (2).