Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/34
Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/36
Structure, shape, material or disposition of the strap connectors prior to the connecting process
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/37
of an individual strap connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/37001
Core members of the connector
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/37198
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/374
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/37463
the principal constituent melting at a temperature of greater than 1550°C
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/37464
Palladium [Pd] as principal constituent
Filter patents View analytics View as hierarchy Open in page

H01L2224/37464

POWER SEMICONDUCTOR MODULE
20170271275 · 2017-09-21 · ·

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.

POWER SEMICONDUCTOR MODULE
20170271275 · 2017-09-21 · ·

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.

Power semiconductor module
09881879 · 2018-01-30 · ·

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.

Power semiconductor module
09881879 · 2018-01-30 · ·

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.