Provided is a semiconductor module including: an insulating circuit board having a circuit pattern formed in one surface; a semiconductor chip placed in the insulating circuit board; and a wiring portion for electrically connecting the semiconductor chip and the circuit pattern. The wiring portion includes a chip connecting portion connected to the semiconductor chip. A surface of the chip connecting portion includes: a plurality of concave portions; and a flat portion disposed between two concave portions.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

A method includes performing a double patterning process to form a first mandrel, a second mandrel, and a third mandrel, with the third mandrel being between the first mandrel and the second mandrel, and etching the third mandrel to cut the third mandrel into a fourth mandrel and a fifth mandrel, with an opening separating the fourth mandrel from the fifth mandrel. A spacer layer is formed on sidewalls of the first, the second, the fourth, and the fifth mandrels, wherein the opening is fully filled by the spacer layer. Horizontal portions of the spacer layer are removed, with vertical portions of the spacer layer remaining un-removed. A target layer is etched using the first, the second, the fourth, and the fifth mandrels and the vertical portions of the spacer layer as an etching mask, with trenches formed in the target layer. The trenches are filled with a filling material.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.