A laser welding method using a laser welding jig having a plurality of pressing parts, includes a step of placing a second member on a first member; a step of pressing the second member with the plurality of pressing parts in a direction toward the first member to thereby form a gap between the first member and the second member at most 300 m; and a first welding step of laser-welding the first member and the second member by irradiating on a surface of the second member at a location between the pressing parts with laser light while conducting the step of pressing.

A laser welding method using a laser welding jig having a plurality of pressing parts, includes a step of placing a second member on a first member; a step of pressing the second member with the plurality of pressing parts in a direction toward the first member to thereby form a gap between the first member and the second member at most 300 m; and a first welding step of laser-welding the first member and the second member by irradiating on a surface of the second member at a location between the pressing parts with laser light while conducting the step of pressing.

A semiconductor device including: first and second conductive portions having a gap therebetween; connection wiring including first and second bonding portions respectively bonded to front surfaces of the first and second conductive portions, and a wiring portion straddling the gap and connecting the first and second bonding portions; and a wire bonded to the wiring portion. The wiring portion includes: a vertical portion extending, from a lower end to an upper end thereof, perpendicularly to the first conductive portion, the lower end being connected to the first bonding portion; a parallel portion extending in parallel to the first and second conductive portions from the upper end of the vertical portion, the parallel portion having, on a front surface thereof, a wire bonding portion to which one end of the wire is bonded; and an inclined portion extending inclinedly from the parallel portion toward the second bonding portion.

A semiconductor device includes a semiconductor chip including an upper electrode, a lead frame having a bonding part and a rising part, and a bonding member joining the upper electrode to the bonding part. The upper electrode has electrode lateral surfaces including a first lateral surface. The bonding part has a bonding front surface and terminal lateral surfaces that include a second lateral surface. The bonding part is joined to the upper electrode such that the second lateral surface faces the first lateral surface. The rising part extends upward from the first lateral surface. In a direction parallel to the electrode front surface, a first shortest distance between a center of the electrode front surface in a plan view and the second lateral surface is equal to or greater than 40% of a second shortest distance between the first lateral surface and the second lateral surface.