Patent classifications
H01L2224/40227
POWER MODULE
A power module includes a mount layer, a control layer, and a drive layer that are formed on an electrically insulative substrate and multiple power semiconductor elements mounted on the mount layer in one direction and each including a first drive electrode connected to the mount layer, a second drive electrode connected to the drive layer, and a control electrode connected to the control layer. A control terminal is connected to the control layer and a detection terminal is connected to the drive layer. At least one of the control layer and the drive layer includes a detour portion that detours to reduce a difference between the power semiconductor elements in a sum of a length of a first conductive path between the control electrode and the control terminal and a length of a second conductive path between the second drive electrode and the detection terminal.
SEMICONDUCTOR DEVICE
A semiconductor device includes at least one semiconductor element having a switching function; a conductive member that forms a path of a current switched by the semiconductor element, and that is made of a first material; and a covering layer that covers at least a portion of the conductive member, and that is made of a second material. The second material satisfies at least one of the following three requirements: (a) having a magnetic permeability higher than the first material; (b) having an electrical resistivity higher than the first material; and (c) having a dielectric loss tangent larger than zero.
SEMICONDUCTOR PACKAGES WITH SUB-TERMINALS AND RELATED METHODS
A semiconductor device package includes a substrate having first and second opposing surfaces. A first surface of a die couples to the second surface of the substrate, and a first surface of an electrically conductive sub-terminal electrically couples with an electrical contact of the die and physically couples to the second surface of the substrate. A mold compound encapsulates the die and a majority of the sub-terminal. In implementations a first surface of the mold compound is coupled to the second surface of the substrate and a second surface of the mold compound opposing the first surface of the mold compound is flush with a second surface of the sub-terminal opposing the first surface of the sub-terminal. In implementations the sub-terminal includes a pillar having a longest length perpendicular to a longest length of the substrate. In implementations an electrically conductive pin couples to the second surface of the sub-terminal.
Module with Gas Flow-Inhibiting Sealing at Module Interface to Mounting Base
A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.
Semiconductor device having multiple contact clips
A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.
Semiconductor power package and method of manufacturing the same
A semiconductor power package includes a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing. The semiconductor power package further includes a power semiconductor chip bonded on the electrically conducting chip carrier. A covering material is provided to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.
POWER MODULE
A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.
Semiconductor device assembly and method therefor
A method of forming a packaged semiconductor device includes attaching a backside surface of a semiconductor die to a major surface of a package substrate. A first conductive connector is formed over a portion of an active surface of the semiconductor die and a portion of the major surface of the package substrate. A first conductive connection between a first bond pad of the semiconductor die and a first substrate pad of the package substrate is formed by way of the first conductive connector. A bond wire connects a second bond pad of the semiconductor die to a second substrate pad of the package substrate. The first bond pad located between the second bond pad and an edge of the semiconductor die.
Semiconductor Die with Back-Side Integrated Inductive Component
An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.
Method of manufacturing chip module
A method of manufacturing a chip module comprises a step of disposing a first electronic element 13 on a first jig 500, a step of disposing a first connector 60 on the first electronic element 13 via a conductive adhesive 5, a step of disposing a second electronic element 23 on the first connector 60 via a conductive adhesive 5, a step of disposing a second connector 70 on a second jig 550, a step of reversing the second jig in a state where the second connector 70 is fixed to the second jig 550 and disposing the second connector 70 on the second electronic element 23 via a conductive adhesive 5, and a step of curing the conductive adhesives 5.