A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

A power module includes at least two power units. Each power unit includes at least one power semiconductor and a substrate. In order to reduce the installation space required for the power module and to improve cooling, the at least one power semiconductor is connected, in particular in a materially bonded manner, to the substrate. The substrates of the at least two power units are each directly connected in a materially bonded manner to a surface of a common heat sink. A power converter having at least one power module is also disclosed.

A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

In one embodiment, methods for making semiconductor devices are disclosed.

Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

A semiconductor package comprising a substrate, at least one semiconductor die disposed on the substrate, at least one electrical connector connected with the semiconductor die, an encapsulant covering the substrate, the at least one semiconductor die, and at least partially the electrical connector, the encapsulant comprising a recess formed into a main surface of the encapsulant, wherein the at least one electrical connector is exposed within the recess.

A semiconductor chip package is provided with improved connections between different components within the package. The semiconductor chip package may comprise a semiconductor chip disposed on a substrate. The semiconductor chip may have a first surface and a second surface. The first surface of the semiconductor chip may be connected to the substrate. The semiconductor chip package may comprise a leadframe that includes a first lead and a second lead. The first lead of the leadframe may be directly attached to the second surface of the semiconductor chip. The second lead of the leadframe may be directly attached to the substrate.

An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 provided on a side of the first substrate 11 and a second terminal part 120 provided on a side of the second substrate 21. The first terminal part 110 has a first surface direction extending part 114 and a first normal direction extending part 113 extending toward one side or the other side. The second terminal part 120 has a second surface direction extending part 124 and a second normal direction extending part 123 extending toward one side or the other side. The second surface direction extending part 124 is provided on one side of the first surface direction extending part 114, and the first surface direction extending part 114 and the second surface direction extending part 124 overlap one another in a surface direction.