A bonding wire includes a hollow member made of an insulator and mounted such as to bridge ICs formed with interconnects, such that a plurality of open ends is each closed by abutting on a surface of the interconnect that is a connection target, and a connection member made of a conductor, filling inside of the hollow member such as to bond to the surface of the interconnect at a location where the hollow member abuts on the surface of the interconnect.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

Some embodiments of the invention include a connecting structure between a support and at least one die attached to the support. The die includes a number of die bond pads on a surface of the die. The connecting structure includes a plurality of via and groove combinations. Conductive material is formed in the via and groove combinations to provide connection between the die bond pads and bond pads on the support. Other embodiments are described and claimed.

A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.

A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 m in thickness.

An electronic device made from the method of providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, laser bending the shaped metallic interconnects; and transferring the shaped metallic interconnects onto a receiving substrate or device.

An electronic device made from the method of providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, laser bending the shaped metallic interconnects; and transferring the shaped metallic interconnects onto a receiving substrate or device.

A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.