The present invention discloses a high-reliability copper alloy bonding wire for electronic packaging and a preparation method therefor; the bonding wire comprises the following raw material components in percentage by weight: a copper content being 99.75%-99.96%, a tungsten content being 0.01-0.1%, a silver content being 0.01%-0.03%, a scandium content being 0.01%-0.02%, a titanium content being 0.001%-0.03%, a chromium content being 0.001%-0.03%, and an iron content being 0.001%-0.02%. The preparation method therefor comprises: extracting high-purity copper with a purity greater than 99.99%, preparing same as copper alloy ingots, and further preparing same as as-cast copper alloy crude bars, drawing the crude bars to form copper alloy wires, subjecting same to a heat treatment, and then precise drawing, a heat treatment, and cleaning to obtain copper alloy bonding wires of different specifications.

A semiconductor device includes: a semiconductor chip having a source electrode pad and mounted on a die pad via a die bonding material; a wire electrically connected with the source electrode pad of the semiconductor chip; and a sealing body sealing the semiconductor chip and the wire. The wire and the source electrode pad are made of different types of metals to each other. A wire bonding layer made of sintered metal is interposed between the source electrode pad and the wire. The wire is electrically connected with the source electrode pad via the wire bonding layer.