The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

A noble metal-coated silver bonding wire suppresses corrosion at the bonding interface under severe conditions of high temperature and high humidity, and the noble metal-coated silver bonding wire can be ball-bonded in the air. The noble metal-coated silver wire for ball bonding is a noble metal-coated silver wire including a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes a palladium intermediate layer and a gold skin layer, the palladium content relative to the entire wire is 0.01 mass % or more and 5.0 mass % or less, the gold content relative to the entire wire is 1.0 mass % or more and 6.0 mass % or less, and the sulfur group element content relative to the entire wire is 0.1 mass ppm or more and 100 mass ppm or less.

A noble metal-coated silver bonding wire for ball bonding wire includes a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes at least one palladium layer, the total palladium content relative to the entire wire is not less than 0.01 mass % and not more than 5.0 mass %, and the total sulfur group element content relative to the entire wire is not less than 0.1 mass ppm and not more than 100 mass ppm.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

A palladium-coated copper bonding wire includes: a core material containing copper as a main component; and a palladium layer on the core material, in which a concentration of palladium relative to the entire wire is 1.0 mass % or more and 4.0 mass % or less, and a work hardening coefficient in an amount of change of an elongation rate 2% or more and a maximum elongation rate εmax % or less of the wire, is 0.20 or less.

There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 m.

A noble metal-coated silver bonding wire suppresses corrosion at the bonding interface under severe conditions of high temperature and high humidity, and the noble metal-coated silver bonding wire can be ball-bonded in the air. The noble metal-coated silver wire for ball bonding is a noble metal-coated silver wire including a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes a palladium intermediate layer and a gold skin layer, the palladium content relative to the entire wire is 0.01 mass % or more and 5.0 mass % or less, the gold content relative to the entire wire is 1.0 mass % or more and 6.0 mass % or less, and the sulfur group element content relative to the entire wire is 0.1 mass ppm or more and 100 mass ppm or less.

A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.

A noble metal-coated silver bonding wire suppresses corrosion at the bonding interface even under severe conditions of high temperature and high humidity in automobiles and does not cause energization failure in a semiconductor device in which electrodes of a semiconductor chip and electrodes of lead frames or the like are connected by the bonding wire. The noble metal-coated silver wire for ball bonding wire includes a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes at least one palladium layer, the total palladium content relative to the entire wire is 0.01 mass % or more and 5.0 mass % or less, and the total sulfur group element content relative to the entire wire is 0.1 mass ppm or more and 100 mass ppm or less.