Internally-shielded microelectronic packages having increased resistances to electromagnetic cross-coupling are disclosed, as are methods for fabricating such microelectronic packages. In embodiments, the internally-shielded microelectronic package includes a substrate having a frontside and a longitudinal axis. A first microelectronic device is mounted to the frontside of the substrate, while a second microelectronic device is further mounted to the frontside of the substrate and spaced from the first microelectronic device along the longitudinal axis. An internal shield structure includes or consists of a shield wall, which is positioned between the first and second microelectronic devices as taken along the longitudinal axis. The internal shield structure is at least partially composed of a magnetically-permeable material, which decreases electromagnetic cross-coupling between the first and second microelectronic devices during operation of the internally-shielded microelectronic package.

Semiconductor packages with electromagnetic interference supported stacked die and a method of manufacture therefor is disclosed. The semiconductor packages may house a stack of dies in a system in a package (SiP) implementation, where one or more of the dies may be wire bonded to a semiconductor package substrate. The dies may be stacked in a partially overlapping, and staggered manner, such that portions of some dies may protrude out over an edge of a die that is below it. This dies stacking may define a cavity, and in some cases, wire bonds may be made to the protruding portions of the die. Underfill material may be provided in the cavity and cured to form an underfill support. Wire bonding of the bond pads overlying the cavity formed by the staggered stacking of the dies may be performed after the formation of the underfill support.

Internally-shielded microelectronic packages having increased resistances to electromagnetic cross-coupling are disclosed, as are methods for fabricating such microelectronic packages. In embodiments, the internally-shielded microelectronic package includes a substrate having a frontside and a longitudinal axis. A first microelectronic device is mounted to the frontside of the substrate, while a second microelectronic device is further mounted to the frontside of the substrate and spaced from the first microelectronic device along the longitudinal axis. An internal shield structure includes or consists of a shield wall, which is positioned between the first and second microelectronic devices as taken along the longitudinal axis. The internal shield structure is at least partially composed of a magnetically-permeable material, which decreases electromagnetic cross-coupling between the first and second microelectronic devices during operation of the internally-shielded microelectronic package.

Internally-shielded microelectronic packages having increased resistances to electromagnetic cross-coupling are disclosed, as are methods for fabricating such microelectronic packages. In embodiments, the internally-shielded microelectronic package includes a substrate having a frontside and a longitudinal axis. A first microelectronic device is mounted to the frontside of the substrate, while a second microelectronic device is further mounted to the frontside of the substrate and spaced from the first microelectronic device along the longitudinal axis. An internal shield structure includes or consists of a shield wall, which is positioned between the first and second microelectronic devices as taken along the longitudinal axis. The internal shield structure is at least partially composed of a magnetically-permeable material, which decreases electromagnetic cross-coupling between the first and second microelectronic devices during operation of the internally-shielded microelectronic package.

Internally-shielded microelectronic packages having increased resistances to electromagnetic cross-coupling are disclosed, as are methods for fabricating such microelectronic packages. In embodiments, the internally-shielded microelectronic package includes a substrate having a frontside and a longitudinal axis. A first microelectronic device is mounted to the frontside of the substrate, while a second microelectronic device is further mounted to the frontside of the substrate and spaced from the first microelectronic device along the longitudinal axis. An internal shield structure includes or consists of a shield wall, which is positioned between the first and second microelectronic devices as taken along the longitudinal axis. The internal shield structure is at least partially composed of a magnetically-permeable material, which decreases electromagnetic cross-coupling between the first and second microelectronic devices during operation of the internally-shielded microelectronic package.

A chip assembly having a carrier having a cavity and at least one carrier contact, a chip arranged in the cavity and having at least one chip contact, and a wirebond wire, which electrically conductively connects the at least one chip contact to the at least one carrier contact, wherein the wirebond wire is flat-pressed in at least one subregion.

A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.

An electronic device made from the method of providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, laser bending the shaped metallic interconnects; and transferring the shaped metallic interconnects onto a receiving substrate or device.

Semiconductor packages with electromagnetic interference supported stacked die and a method of manufacture therefor is disclosed. The semiconductor packages may house a stack of dies in a system in a package (SiP) implementation, where one or more of the dies may be wire bonded to a semiconductor package substrate. The dies may be stacked in a partially overlapping, and staggered manner, such that portions of some dies may protrude out over an edge of a die that is below it. This dies stacking may define a cavity, and in some cases, wire bonds may be made to the protruding portions of the die. Underfill material may be provided in the cavity and cured to form an underfill support. Wire bonding of the bond pads overlying the cavity formed by the staggered stacking of the dies may be performed after the formation of the underfill support.

A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.