In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure. A magnetic field in the first magnetic region is less than a magnetic field in the second magnetic region.

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure. A magnetic field in the first magnetic region is less than a magnetic field in the second magnetic region.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.