A semiconductor device includes a semiconductor substrate having a bonding pad, and a first dielectric layer disposed over the semiconductor substrate. A portion of the bonding pad is exposed by the first dielectric layer. The semiconductor device also includes a metal oxide layer disposed over the portion of the bonding pad, and a wire bond penetrating through the metal oxide layer to bond to the bonding pad. The portion of the bonding pad is entirely covered by the metal oxide layer and the wire bond.

A semiconductor device includes a semiconductor substrate having a bonding pad, and a first dielectric layer disposed over the semiconductor substrate. A portion of the bonding pad is exposed by the first dielectric layer. The semiconductor device also includes a metal oxide layer disposed over the portion of the bonding pad, and a wire bond penetrating through the metal oxide layer to bond to the bonding pad. The portion of the bonding pad is entirely covered by the metal oxide layer and the wire bond.

A chip packaging method and package structure, the package structure including a substrate, a sensing chip coupled to the substrate, a plastic package layer located on the substrate, and a covering layer located on the plastic package layer and a first surface of the sensing chip; the sensing chip including the first surface and a second surface opposite to the first surface, and further including a sensing area located on the first surface; the second surface of the sensing chip faces towards the substrate; and the plastic package layer encloses the sensing chip, and the surface of the plastic package layer is flush with the first surface of the sensing chip.

A chip packaging method and package structure, the package structure including a substrate, a sensing chip coupled to the substrate, a plastic package layer located on the substrate, and a covering layer located on the plastic package layer and a first surface of the sensing chip; the sensing chip including the first surface and a second surface opposite to the first surface, and further including a sensing area located on the first surface; the second surface of the sensing chip faces towards the substrate; and the plastic package layer encloses the sensing chip, and the surface of the plastic package layer is flush with the first surface of the sensing chip.

In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

Provided is a method for bonding an insulated coating wire, which is capable of stably bonding a metal wire in an insulated coating wire and an electrode. One aspect of the present invention provides a method for bonding an insulated coating wire for electrically connecting a first electrode 12 and a second electrode to each other by an insulated coating wire 11 in which a metal wire is coated with an organic substance, the method including: a step (a) for placing the insulated coating wire 11 onto the first electrode 12; a step (b) for exposing a metal wire from the insulated coating wire; and a step (c) for forming a first bump over the exposed metal wire and the first electrode to electrically connect the metal wire to the first electrode.

Provided is a method for bonding an insulated coating wire, which is capable of stably bonding a metal wire in an insulated coating wire and an electrode. One aspect of the present invention provides a method for bonding an insulated coating wire for electrically connecting a first electrode 12 and a second electrode to each other by an insulated coating wire 11 in which a metal wire is coated with an organic substance, the method including: a step (a) for placing the insulated coating wire 11 onto the first electrode 12; a step (b) for exposing a metal wire from the insulated coating wire; and a step (c) for forming a first bump over the exposed metal wire and the first electrode to electrically connect the metal wire to the first electrode.

In some embodiments, the present application provides an integrated chip. The integrated chip includes a chip comprising a semiconductor device. A shielding structure abuts the chip. The shielding structure comprises a first horizontal region adjacent to a first horizontal surface of the chip. The first horizontal region comprises a first multilayer structure comprising a first dielectric layer and two or more metal layers. The first dielectric layer is disposed between the two or more metal layers.

In some embodiments, the present application provides an integrated chip. The integrated chip includes a chip comprising a semiconductor device. A shielding structure abuts the chip. The shielding structure comprises a first horizontal region adjacent to a first horizontal surface of the chip. The first horizontal region comprises a first multilayer structure comprising a first dielectric layer and two or more metal layers. The first dielectric layer is disposed between the two or more metal layers.