An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

A packaged multichip device includes a first IC die with an isolation capacitor utilizing a top metal layer as its top plate and a lower metal layer as its bottom plate. A second IC die has a second isolation capacitor utilizing its top metal layer as its top plate and a lower metal layer as its bottom plate. A first bondwire end is coupled to one top plate and a second bondwire end is coupled to the other top plate. The second bondwire end includes a stitch bond including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.

An IC device includes first and second resistors. The first resistor includes first and second metal segments extending in a first direction in a first metal layer, and a third metal segment extending in a second direction in a second metal layer, and electrically connecting the first and second metal segments. The second resistor includes fourth and fifth metal segments extending in the first direction in the first metal layer, and a sixth metal segment extending in the second direction in a third metal layer, and electrically connecting the fourth and fifth metal segments. The fourth and fifth metal segment have a width greater than a width of the first and second metal segments, the fourth metal segment is between the first and second metal segments and separated from the first metal segment by a distance, and a fourth and fifth metal segment separation is greater than the distance.

A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

A semiconductor device is provided that includes a dielectric layer, a bond pad, a passivation layer and a planar barrier. The bond pad is positioned in the dielectric layer. The passivation layer is positioned over the dielectric layer and has an opening over the bond pad. The planar barrier is positioned on the bond pad.

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.

An electrical device with printed interconnects between packaged integrated circuit components and a substrate as well as a method for printing interconnects between packaged integrated circuit components and a substrate are disclosed. An electrical device with printed interconnects may include a dielectric layer forming a continuous surface between a substrate and a terminal face of an integrated circuit component. The electrical device may further include interconnects formed from a layer of material printed across the continuous surface formed by the dielectric layer to connect electrical terminals on the substrate to electrical terminals on the terminal face of the integrated circuit component.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

A semiconductor device includes a first electrode on a semiconductor element at a first location and a second electrode on the semiconductor element at a second location spaced from the first location. And insulating film covers the first electrode, the second electrode and a third electrode. First and second pads are on the insulating film. The first electrode contacts the first pad through an opening in a first portion of the insulating film. The second electrode contacts the second pad each through an opening in a second portion of the insulating film. A bonding surface of the first pad is at a first distance above one portion of the insulating film, and a second distance above another. A bonding surface of the second pad likewise at different distances above the insulating film depending on location.