A 3D semiconductor device comprising: a first level; and a second level, wherein said first level comprises single crystal silicon and a plurality of logic circuits, wherein said plurality of logic circuits each comprise first transistors, wherein said second level is disposed above said first level and comprises a plurality of arrays of memory cells, said second level comprises a plurality of second transistors, wherein each of said memory cells comprises at least one of said second transistors, wherein said first level is bonded to said second level, wherein said bonded comprises regions of oxide to oxide bonds, wherein said bonded comprises regions of metal to metal bonds; and a thermal isolation layer disposed between said first level and said second level, wherein said thermal isolation layer provides a greater than 20° C. differential temperature between said first level and said second level during nominal operation of said device.

An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first metal region extending in the dielectric layer at a first height and a second metal region extending in the dielectric layer at a second height greater than the first height. The first and second metal regions are capacitively or magnetically coupleable together. The second metal region includes a side wall and a bottom wall coupled to one another through rounded surface portions.

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

A 3D semiconductor device, the device including: a first level; and a second level, where the first level includes single crystal silicon and a plurality of logic circuits, where the second level is disposed above the first level and includes a plurality of arrays of memory cells, where the single crystal silicon includes an area, and where the area is greater than 1,000 mm.sup.2.

A semiconductor apparatus comprises first and second semiconductor component having first and second metal pads, respectively. The first and second semiconductor components are stacked on each other to be bonded to each other at a bonding face. In a plane including the bonding face, first and second ranges each having a circular contour with a diameter of 10 μm or more are definable. None of bonded portions is provided inside of each of the first and second ranges. At least a part of the bonded portions is located between the first and second ranges. The bonded portions are disposed between the first and second ranges such that any straight line passing through the first and second ranges and parallel to a direction connecting centers of the first and second ranges intersects at least one bonded portion of the bonded portions.

A 3D semiconductor device, the device including: a first level; and a second level, where the first level includes single crystal silicon and a plurality of logic circuits, where the second level is disposed above the first level and includes a plurality of arrays of memory cells, where the single crystal silicon includes an area, and where the area is greater than 1,000 mm.sup.2.

A 3D semiconductor device, the device including: a first level; a second level; and a third level, where the first level includes single crystal silicon and a plurality of logic circuits, where the plurality of logic circuits includes a first logic circuit and a second logic circuit, where the second level is disposed directly above the first level and includes a first plurality of arrays of memory cells, where the third level is disposed directly above the second level and includes a plurality of on-chip RF circuits, and where a portion of interconnections between the first logic circuit and the second logic circuit includes the plurality of on-chip RF circuits.

A 3D semiconductor device, the device including: a first level; a second level; and a third level, where the first level includes single crystal silicon and a plurality of logic circuits, where the plurality of logic circuits includes a first logic circuit and a second logic circuit, where the second level is disposed directly above the first level and includes a first plurality of arrays of memory cells, where the third level is disposed directly above the second level and includes a plurality of on-chip RF circuits, and where a portion of interconnections between the first logic circuit and the second logic circuit includes the plurality of on-chip RF circuits.

A semiconductor apparatus comprises first and second semiconductor component having first and second metal pads, respectively. The first and second semiconductor components are stacked on each other to be bonded to each other at a bonding face. In a plane including the bonding face, first and second ranges each having a circular contour with a diameter of 10 μm or more are definable. None of bonded portions is provided inside of each of the first and second ranges. At least a part of the bonded portions is located between the first and second ranges. The bonded portions are disposed between the first and second ranges such that any straight line passing through the first and second ranges and parallel to a direction connecting centers of the first and second ranges intersects at least one bonded portion of the bonded portions.

According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.