A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

In a semiconductor device, a first structure including a first uneven unit and a second structure covering the first structure and including a second uneven unit are formed in a bonding region defined in a semiconductor substrate. Metal wiring is joined to the second uneven unit in the second structure. A depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit. An insulating member defining the bonding region is formed so as to reach the semiconductor substrate.

A method for forming a semiconductor structure includes forming a bond pad over a last metal layer of the semiconductor structure wherein the bond pad includes a wire bond region; and recessing the wire bond region such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.

A light emitting device includes: a base comprising a first lead, a second lead, and a supporting member; a light emitting element mounted on the first lead; a protection element mounted on the second lead; a wire including a first end and a second end, wherein the first end is connected to an upper surface of the first lead, and the second end is connected to a first terminal electrode of the protection element; a resin frame located on an upper surface of the base, wherein the resin frame covers at least part of the protection element and surrounds the light emitting element and the first end of the wire; a first resin member surrounded by the resin frame and covering the light emitting element and the first end of the wire; and a second resin member covering the resin frame and the first resin member.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and a wire extending between the first electrode and the second electrode. The wire includes a first conductor in contact with the first electrode and the second electrode, and a second conductor that is provided inside the first conductor and has no contact with the first electrode and the second electrode.

A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering only top faces on the upper surface side of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.