A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.

A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, and an encapsulant encapsulating at least part of the electronic component and only part of the carrier so that another exposed part of the carrier is exposed with regard to the encapsulant. The exposed part of the carrier comprises an electric connection structure and a corrosion protection structure. One of the electric connection structure and the corrosion protection structure is selectively formed on only a sub-portion of the other one of the electric connection structure and the corrosion protection structure outside of the encapsulant.

Methods and apparatus for providing an interconnection including a stack of wirebond balls having a selected impedance. The wirebond balls may have a size, which may comprise a radius, configured for the selected impedance. The stack may comprise a number of wirebond balls configured for the selected impedance and/or may comprise a material selected for the selected impedance. In embodiments, the selected impedance is primarily resistive (e.g., 50 Ohms), such that the overall reactance is minimized.

A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

A pressure sensor device includes a semiconductor die of the pressure sensor device and a bond wire of the pressure sensor device. A maximal vertical distance between a part of the bond wire and the semiconductor die is larger than a minimal vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

Methods of forming microelectronic package structures, and structures formed thereby, are described. Those methods/structures may include attaching a first die on a board, attaching an interposer on a top surface of the first die, and attaching a second die on the top surface of the first die that is adjacent the interposer, wherein the second die is offset from a center region of the first die. A first wire conductive structure may be attached to the second die that extends from the second die to a top surface of the interposer. A second wire conductive structure is attached to the interposer and extends from the interposer to the board.