Microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a packaged microelectronic device can include an interposer substrate with a plurality of interposer contacts. A microelectronic die is attached and electrically coupled to the interposer substrate. The device further includes a casing covering the die and at least a portion of the interposer substrate. A plurality of electrically conductive through-casing interconnects are in contact with and projecting from corresponding interposer contacts at a first side of the interposer substrate. The through-casing interconnects extend through the thickness of the casing to a terminus at the top of the casing. The through-casing interconnects comprise a plurality of filaments attached to and projecting away from the interposer contacts in a direction generally normal to the first side of the interposer substrate.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

An electronic package is provided and uses a plurality of bonding wires as a shielding structure. The bonding wires are stitch bonded onto a carrier carrying electronic components, such that the problem of the shielding structure peeling off or falling off from the carrier can be avoided due to the fact that the bonding wires are not affected by temperature, humidity and other environmental factors.

An electronic package is provided and uses a plurality of bonding wires as a shielding structure. The bonding wires are stitch bonded onto a carrier carrying electronic components, such that the problem of the shielding structure peeling off or falling off from the carrier can be avoided due to the fact that the bonding wires are not affected by temperature, humidity and other environmental factors.

A method of manufacturing a lead frame includes providing an electrically conductive layer having a plurality of holes at a top surface. The plurality of holes form a structure of leads and a die pad on the electrically conductive layer. The plurality of holes are filled with a non-conductive material. Next; an electrically conductive foil is attached on the top surface of the electrically conductive layer and the non-conductive epoxy material. The, the electrically conductive foil is etched to create a network of leads, die pad, bus lines, dam bars and tie lines, wherein the bus lines connect the leads to the dam bar, the dam bar is connected to the tie line and the tie line is connected to the die pad.

A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.

A semiconductor device (4a-4d) and a wiring device (5) are provided on a main surface of a base plate (1). A first wire (11a-11e) connects an external electrode (7a-7e) and a first relay pad (8a-8e) of the wiring device (5). A second wire (12a-12e) connects a pad (13a-13e) of the semiconductor device (4a-4d) and the second relay pad (9a-9e) of the wiring device (5). Resin (15) seals the semiconductor device (4a-4d), the wiring device (5) and the first and second wires (11a-11e,12a-12e). The second wire (12a-12e) is thinner than the first wire (11a-11e). The pad (13a-13e) is smaller than the first relay pad (8a-8e).

A method of improving electrical interconnections between two electrical elements is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.

Stacked microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a stacked microelectronic device assembly can include a first known good packaged microelectronic device including a first interposer substrate. A first die and a first through-casing interconnects are electrically coupled to the first interposer substrate. A first casing at least partially encapsulates the first device such that a portion of each first interconnect is accessible at a top portion of the first casing. A second known good packaged microelectronic device is coupled to the first device in a stacked configuration. The second device can include a second interposer substrate having a plurality of second interposer pads and a second die electrically coupled to the second interposer substrate. The exposed portions of the first interconnects are electrically coupled to corresponding second interposer pads.

Described examples include an apparatus, including: a substrate having a first surface configured to mount at least one integrated circuit and having a second surface opposite the first surface, the second surface having a plurality of terminals arranged in rows and columns, and at least one row of the plurality of terminals disposed adjacent a first side and extending generally along the length of the substrate arranged in a pattern extending along a longitudinal line, the pattern including a first group of consecutive terminals extending in a first direction at a first angle to the longitudinal line and directed towards an interior of the substrate, a second group of consecutive terminals extending in a second direction at a second angle and extending towards the periphery of the substrate, and a third group of consecutive ones of the terminals extending from the second group in the first direction.