Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/42
Wire connectors; Manufacturing methods related thereto
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H01L2224/47
Structure, shape, material or disposition of the wire connectors after the connecting process
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H01L2224/48
of an individual wire connector
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H01L2224/48699
Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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H01L2224/487
with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/48738
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/48757
Cobalt (Co) as principal constituent
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H01L2224/48757

SEMICONDUCTOR DEVICE AND INSPECTION DEVICE
20210296279 · 2021-09-23 · ·

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

Semiconductor device and inspection device
12040303 · 2024-07-16 · ·

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

Thin NiB or CoB capping layer for non-noble metallic bonding landing pads
10066303 · 2018-09-04 · ·

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

Thin NiB or CoB capping layer for non-noble metallic bonding landing pads
10066303 · 2018-09-04 · ·

The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.