A lead frame includes a first outer lead portion and a second outer lead portion which is arranged to oppose to the first outer lead portion with an element-mounting region between them. An inner lead portion has first inner leads connected to the first outer leads and second inner leads connected to the second outer leads. At least either the first or second inner leads are routed in the element-mounting region. An insulation resin is filled in the gaps between the inner leads located on the element-mounting region. A semiconductor device is configured with semiconductor elements mounted on both the top and bottom surfaces of the lead frame.

Various aspects of the present disclosure are directed toward methods and apparatus that include a lead frame with a fixed external pin pitch. A differential signal path is provided that is characterized by bond-pad pitch range, wire length and wire diameter. The differential signal path carries signals in a frequency range between 5 GHz and 16.1 GHz with less than about 25 dB differential return loss (DDRL). Further, the signals are processed at a signal-processing node that is electrically coupled to the differential signal path by using the differential signal path to carry signals in a frequency range between 5 GHz and about 16.1 GHz.

A method of forming a packaged semiconductor device includes attaching a backside surface of a semiconductor die to a major surface of a package substrate. A first conductive connector is formed over a portion of an active surface of the semiconductor die and a portion of the major surface of the package substrate. A first conductive connection between a first bond pad of the semiconductor die and a first substrate pad of the package substrate is formed by way of the first conductive connector. A bond wire connects a second bond pad of the semiconductor die to a second substrate pad of the package substrate. The first bond pad located between the second bond pad and an edge of the semiconductor die.

An apparatus, a method, and a computer program product are provided. The apparatus may be an electronic component. The electronic component includes at least one energy harvester coupled between at least one pair of hot and cold regions of the electronic component and configured to convert thermal energy to electrical energy in order to provide power to at least the electronic component, the at least one energy harvester including a radiative thermal channel or a conductive thermal channel. A first end of the conductive thermal channel is coupled to a first semiconductor material and a second end of the conductive thermal channel is coupled to a second semiconductor material, the first semiconductor material being coupled to the hot region and isolated from the cold region and the second semiconductor material being coupled to the cold region and isolated from the hot region.

A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Pre-encapsulated lead frames suitable for use in microelectronic device packages are disclosed. Individual lead frames can include a set of multiple lead fingers arranged side by side with neighboring lead fingers spaced apart from each other by a corresponding gap. An encapsulating compound at least partially encapsulates the set of lead fingers without encapsulating a microelectronic device. The encapsulating compound can generally fill the plurality of gaps between two adjacent lead fingers.

A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral portion of the chip is insufficient, so that a power supply pad is also provided in the chip central portion. However, because of an increase in the wiring associated with the integration of a plurality of CPU cores, etc., there occurs a portion between the peripheral portion and the central portion of the chip, where a power supply pad cannot be arranged. According to the outline of the present application, in a semiconductor integrated circuit device such as a BGA, etc., in which a semiconductor chip is mounted over an interposer, such as a multilayer organic wiring board, in a face-up manner, a first group of metal through electrodes, which are provided in the semiconductor chip to supply a power supply potential to a core circuit, etc., and a first metal land over the interposer are interconnected by a first conductive adhesive member film.

A method of forming a packaged semiconductor device includes attaching a backside surface of a semiconductor die to a major surface of a package substrate. A first conductive connector is formed over a portion of an active surface of the semiconductor die and a portion of the major surface of the package substrate. A first conductive connection between a first bond pad of the semiconductor die and a first substrate pad of the package substrate is formed by way of the first conductive connector. A bond wire connects a second bond pad of the semiconductor die to a second substrate pad of the package substrate. The first bond pad located between the second bond pad and an edge of the semiconductor die.

According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

Pre-encapsulated lead frames suitable for use in microelectronic device packages are disclosed. Individual lead frames can include a set of multiple lead fingers arranged side by side with neighboring lead fingers spaced apart from each other by a corresponding gap. An encapsulating compound at least partially encapsulates the set of lead fingers without encapsulating a microelectronic device. The encapsulating compound can generally fill the plurality of gaps between two adjacent lead fingers.