A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

An ultrasonic probe includes, a transducer transmitting and receiving ultrasonic waves, and converting ultrasonic signals into voltage signals and vice versa, a first circuit configured to transmit pulse voltage signals to the transducer and receive the voltage signals from the transducer, a second circuit configured to convert the voltage signals received from the first circuit into digital values from analog values, a battery unit configured to supply electric power to the first circuit and the second circuit, and a substrate being provided with the transducer, the first circuit and the second circuit, the first circuit being disposed on a first surface of the substrate, and the second circuit being disposed on a second surface opposite to the first surface of the substrate.

An ultrasonic probe includes, a transducer transmitting and receiving ultrasonic waves, and converting ultrasonic signals into voltage signals and vice versa, a first circuit configured to transmit pulse voltage signals to the transducer and receive the voltage signals from the transducer, a second circuit configured to convert the voltage signals received from the first circuit into digital values from analog values, a battery unit configured to supply electric power to the first circuit and the second circuit, and a substrate being provided with the transducer, the first circuit and the second circuit, the first circuit being disposed on a first surface of the substrate, and the second circuit being disposed on a second surface opposite to the first surface of the substrate.