Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A soldering system that determines soldering quality of elements relative to a housing at the moment of soldering semiconductor laser elements. A soldering device that performs soldering of a semiconductor laser element to a semiconductor laser module, a robot that conveys the module, a camera, and a control device that controls the robot and camera based on imaging output of the camera. The robot conveys the module and changes the position and posture of the camera. The camera images the module. The control device calculates the position of the semiconductor laser element based on the imaging output, calculates parallelism between the housing of the module and the semiconductor laser element based on the change in light intensity related to the imaging output when changing the relative position between the camera and the subject, and determines the quality of soldering of the semiconductor laser element based on the position and parallelism.

A soldering system that determines soldering quality of elements relative to a housing at the moment of soldering semiconductor laser elements. A soldering device that performs soldering of a semiconductor laser element to a semiconductor laser module, a robot that conveys the module, a camera, and a control device that controls the robot and camera based on imaging output of the camera. The robot conveys the module and changes the position and posture of the camera. The camera images the module. The control device calculates the position of the semiconductor laser element based on the imaging output, calculates parallelism between the housing of the module and the semiconductor laser element based on the change in light intensity related to the imaging output when changing the relative position between the camera and the subject, and determines the quality of soldering of the semiconductor laser element based on the position and parallelism.

A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

An arrangement includes a chamber, a heating element arranged in the chamber, wherein the heating element, when a first connection partner with a pre-connection layer formed thereon is arranged in the chamber, is configured to heat the first connection partner and the pre-connection layer, thereby melting the pre-connection layer, and a cooling trap. During the process of heating the first connection partner with the pre-connection layer formed thereon, the cooling trap has a temperature that is lower than the temperature of all other components of or in the chamber such that liquid evaporating from the pre-connection layer is attracted by and condenses on the cooling trap.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.