A die bonding method includes obtaining information about a quality grade of each die of a plurality of dies placed at a wafer, picking up a first die among the plurality of dies from the wafer, identifying a bonding location of a plurality of bonding locations from a substrate according to a quality grade of the first die, and bonding the first die to the bonding location of the substrate.

A pick and place method and apparatus thereof are provided. The pick and place method includes: providing at least one semiconductor element disposed on a source storage location; picking up the at least one semiconductor element from the source storage location; transferring the at least one semiconductor element to a temporary storage device according to a signal; positioning the at least one semiconductor element through the temporary storage device; and picking up the positioned semiconductor element from the temporary storage device and placing the positioned semiconductor element on a destination storage location.

Provided is a multi-beam laser debonding apparatus for debonding an electronic component from a substrate, the apparatus including: a first laser module to emit a first laser beam to a predetermined range of a first substrate area including attachment positions of a debonding target electronic component and a neighboring electronic component to thereby heat a solder of the electronic components to reach a predetermined pre-heat temperature; and a second laser module to emit a second laser beam overlapping the first laser beam to a second substrate area smaller than the first substrate area, the second substrate area including the attachment position of the debonding target electronic component to thereby heat the solder of the debonding target electronic component to reach a debonding temperature at which the solder commences melting.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

A die attach system is provided. The die attach system includes a verification substrate configured to receive a plurality of die, the verification substrate including a plurality of substrate reference markers. The die attach system also includes an imaging system for determining an alignment of the plurality of die with the verification substrate by imaging each of the plurality of die with respective ones of the plurality of substrate reference markers.

A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.

A ball disposition system includes a ball adsorption device, and a ball guide plate providing a ball guide hole. The ball adsorption device includes an adsorption plate providing an adsorption hole extending in a first direction, and a pin extending in the first direction, a portion of the pin inserted in the adsorption hole. The ball guide plate is located beyond the adsorption plate in the first direction.

A dipping apparatus includes a squeegee device and a plate for forming a flux film out of flux. A surface of the plate has a rough surface with a nano-level arithmetically average roughness. The dipping apparatus is configured in such a way that the squeegee device and the plate are moved relatively to each other, and the flux is fed from the squeegee device to the rough surface of the plate.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.