A driving mechanism including a first rod (103a), a second rod (104a), a first planar motor (106) moving on a plane, a center planar motor (105) moving on the plane and a moving portion (101), in which one end of the first rod is rotatably connected to the moving portion by a first rotation fulcrum (125a), the other end of the first rod is rotatably connected to the first planar motor by a second rotation fulcrum (126a), one end of the second rod is rotatably connected by a third rotation fulcrum (128a) provided on the first rod. The other end of the second rod is rotatably connected to the center planar motor by a fourth rotation fulcrum (127a), and the moving portion is moved so as to recede from the center planar motor when the first planar motor is moved near to the center planar motor.

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.

A ceramic material includes zirconia toughened alumina (ZTA), which is doped with zinc ions and other metal ions, in which the other metal ions are chromium (Cr) ions, titanium (Ti) ions, gadolinium (Gd) ions, manganese (Mn) ions, cobalt (Co) ions, iron (Fe) ions, or a combination thereof. The ceramic material may have a hardness of 1600 Hv10 to 2200 Hv10 and a bending strength of 600 MPa to 645 MPa. The ceramic material can be used as wire bonding capillary.

This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

A ceramic material includes zirconia toughened alumina (ZTA), which is doped with zinc ions and other metal ions, in which the other metal ions are chromium (Cr) ions, titanium (Ti) ions, gadolinium (Gd) ions, manganese (Mn) ions, cobalt (Co) ions, iron (Fe) ions, or a combination thereof. The ceramic material may have a hardness of 1600 Hv10 to 2200 Hv10 and a bending strength of 600 MPa to 645 MPa. The ceramic material can be used as wire bonding capillary.

This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.