Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.

An electronic component mounting device, includes a stage in which a plurality of stage portions are defined, a first heater provided in the plurality of stage portions respectively, and the first heater which can be controlled independently, a mounting head arranged over the stage, and a second heater provided in the mounting head.

In a method of manufacturing an electronic device, a solder paste is coated on a substrate pad of a substrate. An electronic product is disposed on the substrate such that a solder on an input/output pad of the electronic product makes contact with the solder paste. A first microwave is generated toward the solder paste during a reflow stage to heat the solder paste. A phase of the first microwave is changed during the reflow stage. Heating of the solder paste causes the solder to reflow, thereby forming a solder bump between the substrate pad and the input/output pad.

A method for forming an ultrafine-pitch all-copper interconnect structure is provided. Nano-copper particles are mixed with a solvent, a dispersant and a viscosity modifier to prepare a nano-copper paste. A chip with a preset number of copper pillars having a preset diameter and a substrate are selected, cleaned and pretreated. The chip is sucked and flipped by a bonding machine to make the copper pillars face outward. The chip is sucked through a suction nozzle of the bonding machine and dipped in the nano-copper paste. A protective gas is fed, and the copper pillars are aligned with copper pads on the substrate through an optical system of the bonding machine, bonded with the substrate at a preset pressure and temperature under ultrasonication, and cooled at room temperature to obtain the interconnect structure. An ultrafine-pitch all-copper interconnect structure fabricated by the method is also provided.

In a method of manufacturing an electronic device, a solder paste is coated on a substrate pad of a substrate. An electronic product is disposed on the substrate such that a solder on an input/output pad of the electronic product makes contact with the solder paste. A first microwave is generated toward the solder paste during a reflow stage to heat the solder paste. A phase of the first microwave is changed during the reflow stage. Heating of the solder paste causes the solder to reflow, thereby forming a solder bump between the substrate pad and the input/output pad.

Co-planarity adjustment systems and methods, gantries capable of applying high force without imposing moment loads to their bearings, systems and methods for achieving rapid heating and cooling and efficient slidable seal systems capable of sealing a chamber and injecting one or more fluids into the chamber as well as actively recovering portions of such fluid which have migrated into the seal itself are disclosed in the context of thermo-compression bonding systems, apparatuses and methods, although many alternative uses will be apparent to those of skill in the art.

An electronic component-mounted body (1) in accordance with an embodiment of the present invention is configured such that an IC chip (20) is fixed, with use of a post (30) having a thermosetting property, to a wiring substrate (10) having an anisotropic linear expansion coefficient.

An electrical apparatus includes a first electrical component; a second electrical component; and an InSnAg alloy connecting the first electrical component and the second electrical component, the InSnAg alloy containing AgIn.sub.2 and Ag.sub.2In, a Ag.sub.2In content being lower than a AgIn.sub.2 content.